Parametric results for: rn1106fe under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTOR RATION IS 10 1 BUILT-IN BIAS RESISTANCE RATIO IS 10 1 BUILT-IN BIAS RESISTOR RATIO IS 0.1 1 BUILT-IN BIAS RESISTOR RATIO IS 10 1

8 hits Apply

Collector Current-Max (IC) (2)

50 mA 2 100 mA 4

Min (A) - Max (A)

8 hits Apply

Collector-Emitter Voltage-Max (2)

20 V 1 50 V 3

Min (V) - Max (V)

8 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 4

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DC Current Gain-Min (hFE) (3)

30.0 1 80.0 3 120.0 2

Min - Max

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R-PDSO-F3 4

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Manufacturer (1)

Toshiba America Electronic Components 8

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Number of Elements (1)

1 6

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Number of Terminals (1)

3 4

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150.0 °C 3

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PLASTIC/EPOXY 4

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RECTANGULAR 4

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SMALL OUTLINE 4

8 hits Apply

Active 3 Obsolete 5

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NOT SPECIFIED 3

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Polarity/Channel Type (1)

NPN 6

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50 mW 1 100 mW 2 150 mW 1

Min (W) - Max (W)

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Surface Mount (1)

YES 6

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Transition Frequency-Nom (fT) (1)

250 MHz 3

8 hits Apply