Parametric results for: rfp50n06%20substitute under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2 LOGIC LEVEL COMPATIBLE 2

12 hits Apply

DRAIN 11

12 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 11

12 hits Apply

DS Breakdown Voltage-Min (2)

60 V 10 80 V 1

Min (V) - Max (V)

12 hits Apply

Drain Current-Max (ID) (1)

50 A 11

12 hits Apply

Drain-source On Resistance-Max (1)

22 mΩ 11

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

12 hits Apply

TO-220AB 11

12 hits Apply

R-PSFM-T3 11

12 hits Apply

e0 7 e3 4

12 hits Apply

Manufacturer (5)

Fairchild Semiconductor Corporation 4 Harris Semiconductor 2 Intersil Corporation 2 onsemi 1 Rochester Electronics LLC 3

12 hits Apply

NOT SPECIFIED 3

12 hits Apply

Number of Elements (1)

1 11

12 hits Apply

Number of Terminals (1)

3 11

12 hits Apply

ENHANCEMENT MODE 11

12 hits Apply

175.0 °C 8

12 hits Apply

PLASTIC/EPOXY 11

12 hits Apply

RECTANGULAR 11

12 hits Apply

FLANGE MOUNT 11

12 hits Apply

Active 4 Obsolete 7 Transferred 1

12 hits Apply

No 2 Yes 4

12 hits Apply

NOT SPECIFIED 3

12 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

12 hits Apply

131 W 1

12 hits Apply

131 W 5 142 W 1 145 W 2

Min (W) - Max (W)

12 hits Apply

Surface Mount (1)

NO 11

12 hits Apply