Parametric results for: rfm10n45 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 2

4 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

450 V 2

4 hits Apply

Drain Current-Max (ID) (1)

10 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

600 mΩ 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

200 pF 1

4 hits Apply

TO-204AA 2

4 hits Apply

O-MBFM-P2 2

4 hits Apply

e0 4

4 hits Apply

Manufacturer (4)

Harris Semiconductor 1 Intersil Corporation 1 Rochester Electronics LLC 1 Thomson Consumer Electronics 1

4 hits Apply

NOT SPECIFIED 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

2 2

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 3

4 hits Apply

METAL 2

4 hits Apply

ROUND 2

4 hits Apply

FLANGE MOUNT 2

4 hits Apply

Active 1 Obsolete 2 Transferred 1

4 hits Apply

No 1

4 hits Apply

NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

150 W 1

4 hits Apply

150 W 3

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply