Parametric results for: rfd12n06rlesmt under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

ULTRA-LOW RESISTANCE 2

2 hits Apply

DRAIN 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

60 V 2

2 hits Apply

Drain Current-Max (ID) (1)

18 A 2

2 hits Apply

Drain-source On Resistance-Max (2)

63 mΩ 1 75 mΩ 1

Min (Ω) - Max (Ω)

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

TO-252AA 2

2 hits Apply

R-PSSO-G2 2

2 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 1 Intersil Corporation 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

2 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

175.0 °C 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Obsolete 1 Transferred 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply