Parametric results for: rf4e075attcr under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

10.6 mJ 1

2 hits Apply

DRAIN 1

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

30 V 1

2 hits Apply

Drain Current-Max (ID) (1)

7.5 A 1

2 hits Apply

Drain-source On Resistance-Max (1)

31.7 mΩ 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

2 hits Apply

S-PDSO-N6 1

2 hits Apply

e3 2

2 hits Apply

Manufacturer (1)

ROHM Semiconductor 2

2 hits Apply

1 2

2 hits Apply

Number of Elements (1)

1 1

2 hits Apply

Number of Terminals (1)

6 1

2 hits Apply

ENHANCEMENT MODE 1

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

SQUARE 1

2 hits Apply

SMALL OUTLINE 1

2 hits Apply

Active 2

2 hits Apply

NOT SPECIFIED 2

2 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 1

2 hits Apply

Surface Mount (1)

YES 1

2 hits Apply