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RF1S30P06SM9A
Harris Semiconductor
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Check for Price | Obsolete | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 30 A | 65 mΩ | AVALANCHE RATED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 120 W | SWITCHING | SILICON | 100 ns | 80 ns | TO-263AB | R-PSSO-G2 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | HARRIS SEMICONDUCTOR | unknown | EAR99 | 8541.29.00.95 | |||||||
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RF1S30P06SM9A
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 30 A | 65 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 135 W | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 175 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | unknown | EAR99 | |||||||
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RF1S30P06SM9A
Intersil Corporation
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Check for Price | No | Transferred | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 30 A | 65 mΩ | MEGAFET | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 135 W | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin/Lead (Sn/Pb) | GULL WING | SINGLE | INTERSIL CORP | not_compliant | EAR99 |