Parametric results for: rf1k49093 under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 5 MEGAFET 1

8 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 8

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DS Breakdown Voltage-Min (1)

12 V 8

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Drain Current-Max (ID) (1)

2.5 A 8

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Drain-source On Resistance-Max (1)

130 mΩ 8

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METAL-OXIDE SEMICONDUCTOR 8

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MS-012AA 8

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R-PDSO-G8 8

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e0 4

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Manufacturer (4)

Fairchild Semiconductor Corporation 2 Harris Semiconductor 2 Intersil Corporation 2 Rochester Electronics LLC 2

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Number of Elements (1)

2 8

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Number of Terminals (1)

8 8

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ENHANCEMENT MODE 8

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150.0 °C 6

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PLASTIC/EPOXY 8

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RECTANGULAR 8

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SMALL OUTLINE 8

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Active 2 Obsolete 4 Transferred 2

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No 1

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NOT SPECIFIED 1

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Polarity/Channel Type (1)

P-CHANNEL 8

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2 W 4

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Surface Mount (1)

YES 8

8 hits Apply