Parametric results for: ptfb212503elv1r0xtma1 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Gain-Min (Gp) Surface Mount

SOURCE 1

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Configuration (1)

SINGLE 1

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DS Breakdown Voltage-Min (1)

65 V 1

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METAL-OXIDE SEMICONDUCTOR 1

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Highest Frequency Band (1)

S BAND 1

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R-CQFM-X6 1

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Manufacturer (1)

Infineon Technologies AG 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

6 1

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ENHANCEMENT MODE 1

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200.0 °C 1

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CERAMIC, METAL-SEALED COFIRED 1

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RECTANGULAR 1

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FLANGE MOUNT 1

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Transferred 1

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NOT SPECIFIED 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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Power Gain-Min (Gp) (1)

17.0 dB 1

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Surface Mount (1)

YES 1

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