Parametric results for: ptfb182503fl under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Gain-Min (Gp) Surface Mount

HIGH RELIABILITY 4

14 hits Apply

SOURCE 8

14 hits Apply

Configuration (1)

SINGLE 8

14 hits Apply

DS Breakdown Voltage-Min (1)

65 V 8

14 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

14 hits Apply

Highest Frequency Band (1)

L BAND 8

14 hits Apply

R-CQFP-X4 6 R-CQFP-X6 2

14 hits Apply

e4 4

14 hits Apply

Manufacturer (3)

Cree, Inc. 2 Infineon Technologies AG 9 Wolfspeed 3

14 hits Apply

Number of Elements (1)

1 8

14 hits Apply

Number of Terminals (2)

4 6 6 2

14 hits Apply

ENHANCEMENT MODE 8

14 hits Apply

200.0 °C 5

14 hits Apply

CERAMIC, METAL-SEALED COFIRED 8

14 hits Apply

RECTANGULAR 8

14 hits Apply

FLATPACK 8

14 hits Apply

Active 1 Obsolete 6 Transferred 7

14 hits Apply

Yes 3

14 hits Apply

NOT SPECIFIED 8

14 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

14 hits Apply

Power Gain-Min (Gp) (1)

18.0 dB 4

14 hits Apply

Surface Mount (1)

YES 8

14 hits Apply