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Parametric » Transistors » Power Field-Effect Transistors

Parametric results for: psmn4r3-30bl under Power Field-Effect Transistors

Select parts from the table below to compare.

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Select Parts		Part Number

		PSMN4R3-30BL,118 Nexperia
		PSMN4R3-30BL,118 NXP Semiconductors
		PSMN4R3-30BL NXP Semiconductors
		PSMN4R3-30BL Nexperia

			Most Relevant								Technical							Compliance			Operating Conditions				Physical							Other
Composite Price	Rohs Code	Part Life Cycle Code	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	DS Breakdown Voltage-Min	Number of Elements	Drain Current-Max (ID)	Drain-source On Resistance-Max	Avalanche Energy Rating (Eas)	FET Technology	Operating Mode	Power Dissipation-Max (Abs)	Pulsed Drain Current-Max (IDM)	Transistor Application	Transistor Element Material	JESD-30 Code	JESD-609 Code	Reference Standard	Moisture Sensitivity Level	Operating Temperature-Max	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Case Connection	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Manufacturer Package Code	Reach Compliance Code	ECCN Code	Samacsys Manufacturer	Date Of Intro

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

30 V

1

100 A

5.2 mΩ

74 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

465 A

SWITCHING

SILICON

R-PSSO-G2

e3

IEC-60134

1

245

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN

GULL WING

SINGLE

NEXPERIA

D2PAK

D2PAK-3/2

3

SOT404

not_compliant

EAR99

Nexperia

Check for Price

Yes

Transferred

N-CHANNEL

YES

SINGLE

1

100 A

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

103 W

e3

1

175 °C

245

30

TIN

NXP SEMICONDUCTORS

D2PAK

3

SOT404

not_compliant

EAR99

Check for Price

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

30 V

1

100 A

5.2 mΩ

74 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

465 A

SWITCHING

SILICON

R-PSSO-G2

e3

IEC-60134

1

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN

GULL WING

SINGLE

NXP SEMICONDUCTORS

SMALL OUTLINE, R-PSSO-G2

unknown

EAR99

NXP

Check for Price

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

30 V

1

100 A

5.2 mΩ

74 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

465 A

SWITCHING

SILICON

R-PSSO-G2

e3

IEC-60134

1

245

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN

GULL WING

SINGLE

NEXPERIA

SMALL OUTLINE, R-PSSO-G2

not_compliant

EAR99

Nexperia

2017-02-01

Compare

PSMN4R3-30BL,118

Nexperia

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

30 V

1

100 A

5.2 mΩ

74 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

465 A

SWITCHING

SILICON

R-PSSO-G2

e3

IEC-60134

1

245

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN

GULL WING

SINGLE

NEXPERIA

D2PAK

D2PAK-3/2

3

SOT404

not_compliant

EAR99

Nexperia

PSMN4R3-30BL,118

NXP Semiconductors

Check for Price

Yes

Transferred

N-CHANNEL

YES

SINGLE

1

100 A

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

103 W

e3

1

175 °C

245

30

TIN

NXP SEMICONDUCTORS

D2PAK

3

SOT404

not_compliant

EAR99

NXP Semiconductors

Check for Price

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

30 V

1

100 A

5.2 mΩ

74 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

465 A

SWITCHING

SILICON

R-PSSO-G2

e3

IEC-60134

1

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN

GULL WING

SINGLE

NXP SEMICONDUCTORS

SMALL OUTLINE, R-PSSO-G2

unknown

EAR99

NXP

Nexperia

Check for Price

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

30 V

1

100 A

5.2 mΩ

74 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

465 A

SWITCHING

SILICON

R-PSSO-G2

e3

IEC-60134

1

245

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN

GULL WING

SINGLE

NEXPERIA

SMALL OUTLINE, R-PSSO-G2

not_compliant

EAR99

Nexperia

2017-02-01