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Parametric » Transistors » Power Field-Effect Transistors

Parametric results for: psmn3r3-40ys under Power Field-Effect Transistors

Select parts from the table below to compare.

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Select Parts		Part Number

		PSMN3R3-40YS,115 NXP Semiconductors
		PSMN3R3-40YS,115 Nexperia
		PSMN3R3-40YS Nexperia
		PSMN3R3-40YS NXP Semiconductors

			Most Relevant								Technical							Compliance				Operating Conditions				Physical							Other
Composite Price	Rohs Code	Part Life Cycle Code	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	DS Breakdown Voltage-Min	Number of Elements	Drain Current-Max (ID)	Drain-source On Resistance-Max	Avalanche Energy Rating (Eas)	FET Technology	Operating Mode	Power Dissipation-Max (Abs)	Pulsed Drain Current-Max (IDM)	Transistor Application	Transistor Element Material	JEDEC-95 Code	JESD-30 Code	JESD-609 Code	Qualification Status	Moisture Sensitivity Level	Operating Temperature-Max	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Case Connection	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Part Package Code	Pin Count	Manufacturer Package Code	Reach Compliance Code	ECCN Code	Package Description	Samacsys Manufacturer	Date Of Intro

Yes

Transferred

N-CHANNEL

YES

SINGLE

1

100 A

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

117 W

e3

1

175 °C

260

30

TIN

NXP SEMICONDUCTORS

SOIC

4

SOT669

not_compliant

EAR99

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

4

40 V

1

100 A

3.3 mΩ

162 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

546 A

SWITCHING

SILICON

MO-235

R-PSSO-G4

e3

1

260

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN

GULL WING

SINGLE

NEXPERIA

SOIC

4

SOT669

not_compliant

EAR99

SMALL OUTLINE, R-PSSO-G4

Nexperia

Check for Price

Yes

Not Recommended

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

4

40 V

1

100 A

3.3 mΩ

162 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

546 A

SWITCHING

SILICON

MO-235

R-PSSO-G4

e3

1

260

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN

GULL WING

SINGLE

NEXPERIA

not_compliant

EAR99

SMALL OUTLINE, R-PSSO-G4

Nexperia

2017-02-01

Check for Price

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

4

40 V

1

100 A

3.3 mΩ

162 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

546 A

SWITCHING

SILICON

MO-235

R-PSSO-G4

e3

Not Qualified

1

175 °C

NOT SPECIFIED

NOT SPECIFIED

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Tin (Sn)

GULL WING

SINGLE

NXP SEMICONDUCTORS

235

unknown

EAR99

PLASTIC, LFPAK-4

NXP

Compare

PSMN3R3-40YS,115

NXP Semiconductors

Yes

Transferred

N-CHANNEL

YES

SINGLE

1

100 A

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

117 W

e3

1

175 °C

260

30

TIN

NXP SEMICONDUCTORS

SOIC

4

SOT669

not_compliant

EAR99

PSMN3R3-40YS,115

Nexperia

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

4

40 V

1

100 A

3.3 mΩ

162 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

546 A

SWITCHING

SILICON

MO-235

R-PSSO-G4

e3

1

260

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN

GULL WING

SINGLE

NEXPERIA

SOIC

4

SOT669

not_compliant

EAR99

SMALL OUTLINE, R-PSSO-G4

Nexperia

Nexperia

Check for Price

Yes

Not Recommended

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

4

40 V

1

100 A

3.3 mΩ

162 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

546 A

SWITCHING

SILICON

MO-235

R-PSSO-G4

e3

1

260

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

TIN

GULL WING

SINGLE

NEXPERIA

not_compliant

EAR99

SMALL OUTLINE, R-PSSO-G4

Nexperia

2017-02-01

NXP Semiconductors

Check for Price

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

4

40 V

1

100 A

3.3 mΩ

162 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

546 A

SWITCHING

SILICON

MO-235

R-PSSO-G4

e3

Not Qualified

1

175 °C

NOT SPECIFIED

NOT SPECIFIED

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Tin (Sn)

GULL WING

SINGLE

NXP SEMICONDUCTORS

235

unknown

EAR99

PLASTIC, LFPAK-4

NXP