Parametric results for: pmv35epe under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

LOGIC LEVEL COMPATIBLE 2

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 2

4 hits Apply

Drain Current-Max (ID) (1)

4.2 A 2

4 hits Apply

Drain-source On Resistance-Max (1)

45 mΩ 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

4 hits Apply

TO-236AB 2

4 hits Apply

R-PDSO-G3 2

4 hits Apply

e3 1

4 hits Apply

Manufacturer (2)

Nexperia 3 NXP Semiconductors 1

4 hits Apply

1 2

4 hits Apply

Number of Elements (1)

1 2

4 hits Apply

Number of Terminals (1)

3 2

4 hits Apply

ENHANCEMENT MODE 2

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

SMALL OUTLINE 2

4 hits Apply

Active 3 Transferred 1

4 hits Apply

260 2

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 2

4 hits Apply

Surface Mount (1)

YES 2

4 hits Apply