Parametric results for: phn100 under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 6

32 hits Apply

Configuration (2)

SINGLE 9 SINGLE WITH BUILT-IN DIODE 22

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DS Breakdown Voltage-Min (3)

20 V 3 25 V 8 30 V 11

Min (V) - Max (V)

32 hits Apply

Drain Current-Max (ID) (10)

4.8 A 4 5.8 A 1 6 A 1 8.5 A 5 8.6 A 5 8.7 A 1 9 A 1 9.6 A 3 10 A 7 11 A 2

Min (A) - Max (A)

32 hits Apply

Drain-source On Resistance-Max (7)

11 mΩ 1 13.5 mΩ 2 18 mΩ 3 21 mΩ 3 30 mΩ 9 35 mΩ 1 50 mΩ 3

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 32

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MS-012AA 15

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R-PDSO-G8 22

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e0 9

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Manufacturer (2)

NXP Semiconductors 22 Philips Semiconductors 10

32 hits Apply

2 1

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Number of Elements (1)

1 31

32 hits Apply

Number of Terminals (1)

8 22

32 hits Apply

ENHANCEMENT MODE 32

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150.0 °C 20

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PLASTIC/EPOXY 22

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RECTANGULAR 22

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SMALL OUTLINE 22

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Obsolete 22 Transferred 10

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260 1 NOT SPECIFIED 1

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Polarity/Channel Type (1)

N-CHANNEL 32

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2 W 3 4 W 2

Min (W) - Max (W)

32 hits Apply

1.8 W 1 2 W 1 2.5 W 7 2.7 W 3 4 W 1 6.25 W 2

Min (W) - Max (W)

32 hits Apply

Surface Mount (1)

YES 32

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