Parametric results for: om6111sa under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 11

11 hits Apply

ISOLATED 11

11 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 11

11 hits Apply

DS Breakdown Voltage-Min (1)

400 V 11

11 hits Apply

Drain Current-Max (ID) (1)

10 A 11

11 hits Apply

Drain-source On Resistance-Max (1)

550 mΩ 11

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

TO-254AA 11

11 hits Apply

S-MSFM-P3 11

11 hits Apply

e0 5

11 hits Apply

Manufacturer (3)

Infineon Technologies AG 4 International Rectifier 4 Omnirel Corp 3

11 hits Apply

1 2

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (1)

3 11

11 hits Apply

ENHANCEMENT MODE 11

11 hits Apply

150.0 °C 7

11 hits Apply

METAL 11

11 hits Apply

SQUARE 11

11 hits Apply

FLANGE MOUNT 11

11 hits Apply

Active 4 Transferred 7

11 hits Apply

No 3 Yes 1

11 hits Apply

260 1 NOT SPECIFIED 1

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

11 hits Apply

125 W 3

11 hits Apply

Surface Mount (1)

NO 11

11 hits Apply