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Parametric » Optoelectronics » Laser Diodes

Parametric results for: nx6508gh61 under Laser Diodes

Select parts from the table below to compare.

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Select Parts		Part Number

		NX6508GH61-AZ Renesas Electronics Corporation
		NX6508GH61 NEC Compound Semiconductor Devices Ltd
		NX6508GH61-A NEC Electronics Group
		NX6508GH61-A NEC Compound Semiconductor Devices Ltd
		NX6508GH61 NEC Electronics Group

			Most Relevant					Technical							Compliance	Operating Conditions		Physical			Dimensions		Other
Composite Price	Rohs Code	Part Life Cycle Code	Operating Wavelength-Nom	Operating Wavelength-Min	Operating Wavelength-Max	Data Rate	Supply Voltage-Nom	Fiber Optic Device Type	Fall Time-Max	Number of Channels	Rise Time	Supply Current	Supply Voltage-Max	Threshold Current-Min	JESD-609 Code	Operating Temperature-Min	Operating Temperature-Max	Mounting Feature	Surface Mount	Terminal Finish	Body Height	Body Length or Diameter	Ihs Manufacturer	Reach Compliance Code	Forward Current-Max	Forward Voltage-Max	Optoelectronic Device Type	Peak Wavelength	Response Time-Max	Semiconductor Material	Package Description

Check for Price

Yes

Obsolete

-20 °C

85 °C

THROUGH HOLE MOUNT

NO

RENESAS ELECTRONICS CORP

compliant

150 mA

1.6 V

LASER DIODE

1.61 µm

100 ps

InGaAsP

Check for Price

No

Transferred

1.61 µm

1.608 µm

1.612 µm

2.5 Gbps

1.1 V

DFB LASER DIODE EMITTER

150 ps

1

100 ps

1 mA

1.6 V

10 mA

e0

-20 °C

85 °C

THROUGH HOLE MOUNT

NO

Tin/Lead (Sn/Pb)

5.17 mm

4.3 mm

NEC COMPOUND SEMICONDUCTOR DEVICES LTD

compliant

Check for Price

Yes

Transferred

1.61 µm

1.608 µm

1.612 µm

2.5 Gbps

1.1 V

DFB LASER DIODE EMITTER

150 ps

1

100 ps

1 mA

1.6 V

10 mA

e6

-20 °C

85 °C

THROUGH HOLE MOUNT

NO

Tin/Bismuth (Sn/Bi)

5.17 mm

4.3 mm

NEC ELECTRONICS CORP

compliant

Check for Price

Yes

Transferred

1.61 µm

1.608 µm

1.612 µm

2.5 Gbps

1.1 V

DFB LASER DIODE EMITTER

150 ps

1

100 ps

1 mA

1.6 V

10 mA

-20 °C

85 °C

THROUGH HOLE MOUNT

NO

5.17 mm

4.3 mm

NEC COMPOUND SEMICONDUCTOR DEVICES LTD

compliant

CAN PACKAGE-4

Check for Price

No

Transferred

1.61 µm

1.608 µm

1.612 µm

2.5 Gbps

1.1 V

DFB LASER DIODE EMITTER

150 ps

1

100 ps

1 mA

1.6 V

10 mA

e0

-20 °C

85 °C

THROUGH HOLE MOUNT

NO

Tin/Lead (Sn/Pb)

5.17 mm

4.3 mm

NEC ELECTRONICS CORP

compliant

Compare

Renesas Electronics Corporation

Check for Price

Yes

Obsolete

-20 °C

85 °C

THROUGH HOLE MOUNT

NO

RENESAS ELECTRONICS CORP

compliant

150 mA

1.6 V

LASER DIODE

1.61 µm

100 ps

InGaAsP

NEC Compound Semiconductor Devices Ltd

Check for Price

No

Transferred

1.61 µm

1.608 µm

1.612 µm

2.5 Gbps

1.1 V

DFB LASER DIODE EMITTER

150 ps

1

100 ps

1 mA

1.6 V

10 mA

e0

-20 °C

85 °C

THROUGH HOLE MOUNT

NO

Tin/Lead (Sn/Pb)

5.17 mm

4.3 mm

NEC COMPOUND SEMICONDUCTOR DEVICES LTD

compliant

NEC Electronics Group

Check for Price

Yes

Transferred

1.61 µm

1.608 µm

1.612 µm

2.5 Gbps

1.1 V

DFB LASER DIODE EMITTER

150 ps

1

100 ps

1 mA

1.6 V

10 mA

e6

-20 °C

85 °C

THROUGH HOLE MOUNT

NO

Tin/Bismuth (Sn/Bi)

5.17 mm

4.3 mm

NEC ELECTRONICS CORP

compliant

NEC Compound Semiconductor Devices Ltd

Check for Price

Yes

Transferred

1.61 µm

1.608 µm

1.612 µm

2.5 Gbps

1.1 V

DFB LASER DIODE EMITTER

150 ps

1

100 ps

1 mA

1.6 V

10 mA

-20 °C

85 °C

THROUGH HOLE MOUNT

NO

5.17 mm

4.3 mm

NEC COMPOUND SEMICONDUCTOR DEVICES LTD

compliant

CAN PACKAGE-4

NEC Electronics Group

Check for Price

No

Transferred

1.61 µm

1.608 µm

1.612 µm

2.5 Gbps

1.1 V

DFB LASER DIODE EMITTER

150 ps

1

100 ps

1 mA

1.6 V

10 mA

e0

-20 °C

85 °C

THROUGH HOLE MOUNT

NO

Tin/Lead (Sn/Pb)

5.17 mm

4.3 mm

NEC ELECTRONICS CORP

compliant