Parametric results for: ntr4003nt3g under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 2

4 hits Apply

Drain Current-Max (ID) (1)

500 mA 3

4 hits Apply

Drain-source On Resistance-Max (1)

2 Ω 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

TO-236 2

4 hits Apply

R-PDSO-G3 2

4 hits Apply

e3 2

4 hits Apply

Manufacturer (3)

LRC Leshan Radio Co Ltd 2 onsemi 1 Rochester Electronics LLC 1

4 hits Apply

1 1 NOT SPECIFIED 1

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

3 2

4 hits Apply

ENHANCEMENT MODE 2

4 hits Apply

150.0 °C 2

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

SMALL OUTLINE 2

4 hits Apply

Active 2 Contact Manufacturer 2

4 hits Apply

Yes 2

4 hits Apply

260 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

830 mW 2

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply