Parametric results for: nthc5513t1g under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

20 V 2

2 hits Apply

Drain Current-Max (ID) (1)

3.1 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

80 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

R-XDSO-C8 2

2 hits Apply

e3 2

2 hits Apply

Manufacturer (2)

onsemi 1 Rochester Electronics LLC 1

2 hits Apply

1 1

2 hits Apply

Number of Elements (1)

2 2

2 hits Apply

Number of Terminals (1)

8 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 1

2 hits Apply

UNSPECIFIED 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Active 1 End Of Life 1

2 hits Apply

No 1 Yes 1

2 hits Apply

260 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL AND P-CHANNEL 2

2 hits Apply

1.1 W 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply