Parametric results for: nif9n05clt3g under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 1

1 hit Apply

110.0 mJ 1

1 hit Apply

DRAIN 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE AND RESISTOR 1

1 hit Apply

DS Breakdown Voltage-Min (1)

52 V 1

1 hit Apply

Drain Current-Max (ID) (1)

2.6 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

125 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

TO-261AA 1

1 hit Apply

R-PDSO-G4 1

1 hit Apply

e3 1

1 hit Apply

Manufacturer (1)

onsemi 1

1 hit Apply

3 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

4 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

150.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Contact Manufacturer 1

1 hit Apply

Yes 1

1 hit Apply

260 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

1.69 W 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply