Parametric results for: ne424 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

LOW NOISE 10

15 hits Apply

Configuration (1)

SINGLE 14

15 hits Apply

DS Breakdown Voltage-Min (2)

3 V 10 4 V 3

Min (V) - Max (V)

15 hits Apply

Drain Current-Max (ID) (2)

20 mA 10 70 mA 4

Min (A) - Max (A)

15 hits Apply

HETERO-JUNCTION 13

15 hits Apply

Highest Frequency Band (2)

KU BAND 11 X BAND 3

15 hits Apply

O-CRDB-F4 13 O-XRDB-F4 1

15 hits Apply

Manufacturer (4)

California Eastern Laboratories (CEL) 3 NEC Electronics America Inc 1 NEC Electronics Group 6 Renesas Electronics Corporation 5

15 hits Apply

Number of Elements (1)

1 14

15 hits Apply

Number of Terminals (1)

4 14

15 hits Apply

DEPLETION MODE 13

15 hits Apply

150.0 °C 5

15 hits Apply

CERAMIC, METAL-SEALED COFIRED 13 UNSPECIFIED 1

15 hits Apply

ROUND 14

15 hits Apply

DISK BUTTON 14

15 hits Apply

Obsolete 15

15 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 14

15 hits Apply

165 mW 1 355 mW 1

Min (W) - Max (W)

15 hits Apply

Power Gain-Min (Gp) (3)

9.0 dB 7 10.5 dB 1 11.0 dB 6

Min (dB) - Max (dB)

15 hits Apply

Surface Mount (1)

YES 14

15 hits Apply