Parametric results for: ne3517s03 under RF Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Configuration (1)

SINGLE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

3 V 2

2 hits Apply

Drain Current-Max (ID) (1)

15 mA 2

2 hits Apply

HETERO-JUNCTION 2

2 hits Apply

Highest Frequency Band (1)

K BAND 2

2 hits Apply

R-PXMW-F4 2

2 hits Apply

Manufacturer (1)

Renesas Electronics Corporation 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

4 2

2 hits Apply

DEPLETION MODE 2

2 hits Apply

125.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

MICROWAVE 2

2 hits Apply

Obsolete 2

2 hits Apply

Yes 2

2 hits Apply

NOT SPECIFIED 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

165 mW 2

2 hits Apply

Power Gain-Min (Gp) (1)

11.5 dB 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply