Parametric results for: ne3514s02t1c under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

LOW NOISE 3

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

3 V 3

3 hits Apply

Drain Current-Max (ID) (1)

15 mA 3

3 hits Apply

HETERO-JUNCTION 3

3 hits Apply

Highest Frequency Band (1)

K BAND 3

3 hits Apply

R-PQMW-F4 1 R-PXMW-F4 2

3 hits Apply

e6 2

3 hits Apply

Manufacturer (3)

NEC Compound Semiconductor Devices Ltd 1 NEC Electronics Group 1 Renesas Electronics Corporation 1

3 hits Apply

1 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

4 3

3 hits Apply

DEPLETION MODE 3

3 hits Apply

125.0 °C 1

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

MICROWAVE 3

3 hits Apply

Obsolete 1 Transferred 2

3 hits Apply

Yes 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

165 mW 1

3 hits Apply

Power Gain-Min (Gp) (1)

8.0 dB 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply