Parametric results for: ne3509m04t2 under RF Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Configuration (1)

SINGLE 3

6 hits Apply

DS Breakdown Voltage-Min (2)

3 V 3 4 V 3

Min (V) - Max (V)

6 hits Apply

Drain Current-Max (ID) (2)

20 mA 3 60 mA 3

Min (A) - Max (A)

6 hits Apply

HETERO-JUNCTION 6

6 hits Apply

Highest Frequency Band (1)

S BAND 6

6 hits Apply

R-PDSO-F4 6

6 hits Apply

e0 2 e6 3

6 hits Apply

Manufacturer (2)

NEC Electronics Group 3 Renesas Electronics Corporation 3

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

4 6

6 hits Apply

DEPLETION MODE 6

6 hits Apply

150.0 °C 2

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

SMALL OUTLINE 6

6 hits Apply

Obsolete 3 Transferred 3

6 hits Apply

No 1 Yes 2

6 hits Apply

NOT SPECIFIED 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

150 mW 2

6 hits Apply

Power Gain-Min (Gp) (1)

16.0 dB 3

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply