Parametric results for: nds336p under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 8

11 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 11

11 hits Apply

DS Breakdown Voltage-Min (1)

20 V 11

11 hits Apply

Drain Current-Max (ID) (1)

1.2 A 11

11 hits Apply

Drain-source On Resistance-Max (2)

200 mΩ 8 270 mΩ 3

Min (Ω) - Max (Ω)

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

TO-236AB 8

11 hits Apply

R-PDSO-G3 11

11 hits Apply

e0 2 e3 3

11 hits Apply

Manufacturer (4)

Fairchild Semiconductor Corporation 5 National Semiconductor Corporation 1 Rochester Electronics LLC 1 Texas Instruments 4

11 hits Apply

1 3

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (1)

3 11

11 hits Apply

ENHANCEMENT MODE 11

11 hits Apply

150.0 °C 9

11 hits Apply

PLASTIC/EPOXY 11

11 hits Apply

RECTANGULAR 11

11 hits Apply

SMALL OUTLINE 11

11 hits Apply

Active 1 Obsolete 8 Transferred 2

11 hits Apply

Yes 1

11 hits Apply

260 1

11 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 11

11 hits Apply

460 mW 5

11 hits Apply

500 mW 4

11 hits Apply

Surface Mount (1)

YES 11

11 hits Apply