Parametric results for: nand256w3a2bza6f under Flash Memories

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Manufacturer Part Number: nand256w3a2bza6f
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NAND256W3A2BZA6F
STMicroelectronics
Check for Price Yes Transferred 268.4355 Mbit 8 16K 32MX8 3 V 12 µs FLASH YES NO 1 2K 32000000 33.5544 M ASYNCHRONOUS 512 words PARALLEL 3 V YES 50 µA 20 µA 3.6 V 2.7 V CMOS INDUSTRIAL NO SLC NAND TYPE R-PBGA-B55 Not Qualified e1 85 °C -40 °C 55 PLASTIC/EPOXY TFBGA BGA55,8X12,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.05 mm 10 mm 8 mm STMICROELECTRONICS BGA 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-55 55 compliant EAR99 8542.32.00.51
NAND256W3A2BZA6F
Micron Technology Inc
Check for Price Yes Yes Obsolete 268.4355 Mbit 8 16K 32MX8 3 V 35 ns FLASH YES NO 1 2K 32000000 33.5544 M ASYNCHRONOUS 512 words PARALLEL 3 V YES 50 µA 20 µA 3.6 V 2.7 V CMOS INDUSTRIAL NO SLC NAND TYPE R-PBGA-B55 Not Qualified e1 85 °C -40 °C 55 PLASTIC/EPOXY TFBGA BGA55,8X12,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.05 mm 10 mm 8 mm MICRON TECHNOLOGY INC BGA TFBGA, BGA55,8X12,32 55 compliant EAR99 8542.32.00.51
NAND256W3A2BZA6F
Numonyx Memory Solutions
Check for Price Yes Yes Transferred 268.4355 Mbit 8 16K 32MX8 3 V 12 µs FLASH YES NO 1 2K 32000000 33.5544 M ASYNCHRONOUS 512 words PARALLEL 3 V YES 50 µA 20 µA 3.6 V 2.7 V CMOS INDUSTRIAL NO SLC NAND TYPE R-PBGA-B55 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 55 PLASTIC/EPOXY TFBGA BGA55,8X12,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.05 mm 10 mm 8 mm NUMONYX BGA TFBGA, BGA55,8X12,32 55 unknown EAR99 8542.32.00.51