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Parametric » Memory » DRAMs

Parametric results for: mt53 under DRAMs

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Manufacturer Part Number: mt53
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MT53E256M32D2DS-053/046AUT:B
 Micron Technology Inc 		Check for Price Buy Active 1.1 V YES CMOS 1 1.17 V 1.06 V R-PBGA-B200 105 °C -40 °C AEC-Q100 200 PLASTIC/EPOXY VFBGA BGA200,12X22,32/25 RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH BALL 800 µm BOTTOM 14.5 mm 800 µm 10 mm MICRON TECHNOLOGY INC compliant EAR99 8542.32.00.36 MULTI BANK PAGE BURST 1.866 GHz COMMON 16,32 4.295 Gbit LPDDR4 DRAM 16 1 268.4355 M 256000000 SYNCHRONOUS 256MX16 3-STATE YES 16,32
MT53E256M32D2DS-053AAT:BTR
 Micron Technology Inc 		Check for Price Buy Obsolete NOT SPECIFIED NOT SPECIFIED MICRON TECHNOLOGY INC unknown EAR99 DDR4 DRAM ,
MT53B1024M32D4NQ-062WT:C
 Micron Technology Inc 		Check for Price Buy Obsolete 1.1 V YES CMOS SELF REFRESH; IT ALSO REQUIRES 1.8V NOM 1 1.17 V 1.06 V R-PBGA-B200 85 °C -30 °C 200 PLASTIC/EPOXY VFBGA BGA200,12X22,32/25 RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH BALL 800 µm BOTTOM 14.5 mm 950 µm 10 mm MICRON TECHNOLOGY INC compliant EAR99 8542.32.00.36 DUAL BANK PAGE BURST 1.6 GHz COMMON 16,32 34.3597 Gbit DDR4 DRAM 32 1 1.0737 G 1000000000 SYNCHRONOUS 1GX32 3-STATE YES 16,32 8192
MT53C4K18D4EJ-35IT
 Micron Technology Inc 		Check for Price Buy No Contact Manufacturer 5 V YES 5 V CMOS 200 µA INDUSTRIAL S-PQCC-J68 Not Qualified e0 85 °C -40 °C 68 PLASTIC/EPOXY QCCJ LDCC68,1.0SQ SQUARE CHIP CARRIER Tin/Lead (Sn/Pb) J BEND 1.27 mm QUAD MICRON TECHNOLOGY INC compliant 28.6 MHz 73.728 kbit OTHER FIFO 18 4.096 k 4000 SYNCHRONOUS 4KX18 35 ns 5 mA
MT53B256M32D1DS-062AUT:C
 Micron Technology Inc 		Check for Price Buy Obsolete 1.1 V YES CMOS SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX 1 445 µA 1.17 V 1.06 V R-PBGA-B200 125 °C -40 °C 200 PLASTIC/EPOXY VFBGA BGA200,12X22,32/25 RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH BALL 800 µm BOTTOM 14.5 mm 800 µm 10 mm MICRON TECHNOLOGY INC compliant EAR99 SINGLE BANK PAGE BURST 1.6 GHz COMMON 16,32 8.5899 Gbit LPDDR4 DRAM 32 1 268.4355 M 256000000 SYNCHRONOUS 256MX32 3-STATE YES 16,32 , 8192 5 mA
MT53C1K18B2EJ-25
 Micron Technology Inc 		Check for Price Buy No No Obsolete 5 V YES CMOS RETRANSMIT 1 200 µA 5.5 V 4.5 V COMMERCIAL S-PQCC-J68 Not Qualified e0 70 °C 68 PLASTIC/EPOXY QCCJ LDCC68,1.0SQ SQUARE CHIP CARRIER TIN LEAD J BEND 1.27 mm QUAD 24.23 mm 5.08 mm 24.23 mm MICRON TECHNOLOGY INC not_compliant EAR99 8542.32.00.71 40 MHz 18.432 kbit OTHER FIFO 18 1.024 k 1000 SYNCHRONOUS 1KX18 PLASTIC, LCC-68 25 ns 5 mA LCC 68 25 ns YES
MT53C1K18B2EJ-15AT
 Micron Technology Inc 		Check for Price Buy No Contact Manufacturer 5 V YES 5 V CMOS 200 µA AUTOMOTIVE S-PQCC-J68 Not Qualified e0 125 °C -40 °C 68 PLASTIC/EPOXY QCCJ LDCC68,1.0SQ SQUARE CHIP CARRIER Tin/Lead (Sn/Pb) J BEND 1.27 mm QUAD MICRON TECHNOLOGY INC compliant 66.7 MHz 18.432 kbit OTHER FIFO 18 1.024 k 1000 SYNCHRONOUS 1KX18 15 ns 5 mA
MT53C2K18C3EJ-15TR
 Micron Technology Inc 		Check for Price Buy Obsolete 5 V YES CMOS RETRANSMIT 1 5.5 V 4.5 V COMMERCIAL S-PQCC-J68 Not Qualified e0 70 °C 68 PLASTIC/EPOXY QCCJ SQUARE CHIP CARRIER TIN LEAD J BEND 1.27 mm QUAD 24.23 mm 5.08 mm 24.23 mm MICRON TECHNOLOGY INC unknown EAR99 8542.32.00.71 36.864 kbit 18 2.048 k 2000 SYNCHRONOUS 2KX18 QCCJ, LCC 68 15 ns YES
MT53S
 Tele-Tech Corp 		Check for Price Buy Contact Manufacturer TELE-TECH CORP unknown 8542.39.00.01 ,
MT53B512M32D2DS-062AAT:CTR
 Micron Technology Inc 		Check for Price Buy Contact Manufacturer MICRON TECHNOLOGY INC compliant EAR99 LPDDR4 DRAM
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