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MT47H256M4HQ-37EAT
Micron Technology Inc
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Check for Price | Yes | Yes | Active | 1.0737 Gbit | 4 | 256MX4 | 1.55 V | 450 ps | MULTI BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 1.9 V | 1.5 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | e1 | 105 °C | -40 °C | 260 | 30 | 60 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 11.5 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | TFBGA, | 60 | compliant | |||||||||||||
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MT47H256M4HQ-37ELIT:G
Micron Technology Inc
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Check for Price | Yes | Yes | Obsolete | 1.0737 Gbit | 4 | 256MX4 | 1.8 V | 500 ps | 267 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 270 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | e1 | 85 °C | -40 °C | 60 | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 11.5 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | TFBGA, BGA60,9X11,32 | 60 | compliant | EAR99 | 8542.32.00.32 | ||||
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MT47H256M4HQ-3IT
Micron Technology Inc
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Check for Price | Yes | Yes | Active | 1.0737 Gbit | 4 | 256MX4 | 1.55 V | 400 ps | MULTI BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 1.9 V | 1.5 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | e1 | 85 °C | -40 °C | 260 | 30 | 60 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 11.5 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | TFBGA, | 60 | compliant | |||||||||||||
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MT47H256M4HQ-3ELAT:G
Micron Technology Inc
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Check for Price | Yes | Yes | Obsolete | 1.0737 Gbit | 4 | 256MX4 | 1.8 V | 450 ps | 333 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 280 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | e1 | 105 °C | -40 °C | 60 | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 11.5 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | TFBGA, BGA60,9X11,32 | 60 | compliant | EAR99 | 8542.32.00.32 | ||||
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MT47H256M4HQ-3AT
Micron Technology Inc
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Check for Price | Yes | Yes | Active | 1.0737 Gbit | 4 | 256MX4 | 1.55 V | 400 ps | MULTI BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 1.9 V | 1.5 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | e1 | 105 °C | -40 °C | 260 | 30 | 60 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 11.5 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | TFBGA, | 60 | compliant | |||||||||||||
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MT47H256M4HQ-37EL:E
Micron Technology Inc
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Check for Price | Yes | Yes | Obsolete | 1.0737 Gbit | 4 | 256MX4 | 1.8 V | 500 ps | 267 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 270 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | e1 | 85 °C | -40 °C | 60 | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 11.5 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | TFBGA, BGA60,9X11,32 | 60 | compliant | EAR99 | 8542.32.00.32 | ||||
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MT47H256M4HQ-37EAT:G
Micron Technology Inc
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Check for Price | Yes | Yes | Obsolete | 1.0737 Gbit | 4 | 256MX4 | 1.8 V | 500 ps | 267 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 270 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | e1 | 105 °C | -40 °C | 60 | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 11.5 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | TFBGA, BGA60,9X11,32 | 60 | compliant | EAR99 | 8542.32.00.32 | ||||
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MT47H256M4HQ-37EIT
Micron Technology Inc
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Check for Price | Yes | Yes | Active | 1.0737 Gbit | 4 | 256MX4 | 1.55 V | 450 ps | MULTI BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 1.9 V | 1.5 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | e1 | 85 °C | -40 °C | 260 | 30 | 60 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 11.5 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | TFBGA, | 60 | compliant | |||||||||||||
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MT47H256M4HQ-3E:E
Micron Technology Inc
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Check for Price | Yes | Obsolete | 1.0737 Gbit | 4 | 256MX4 | 1.8 V | 450 ps | 333 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 280 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | e1 | 85 °C | -40 °C | 60 | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 11.5 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | TFBGA, BGA60,9X11,32 | 60 | unknown | EAR99 | 8542.32.00.32 | |||||
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MT47H256M4HQ-3EIT
Micron Technology Inc
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Check for Price | Yes | Yes | Active | 1.0737 Gbit | 4 | 256MX4 | 1.55 V | 400 ps | MULTI BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 1.9 V | 1.5 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | e1 | 85 °C | -40 °C | 260 | 30 | 60 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 11.5 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | TFBGA, | 60 | compliant |