Findchips: Parametric Search Results for mt29f4

Parametric results for: mt29f4 under Flash Memories

Select parts from the table below to compare.

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Select Parts		Part Number

		MT29F4G01ABAFD12-AAT:F Micron Technology Inc
		MT29F4G01ABBFD12-AAT:F Micron Technology Inc
		MT29F4G08ABBFAH4-AAT:F Micron Technology Inc
		MT29F4G08ABBFAH4-IT:F Micron Technology Inc
		MT29F4G16ABBFAH4-AAT:F Micron Technology Inc
		MT29F4G08ABADAH4:D Micron Technology Inc
		MT29F4G08ABADAH4-IT:D Micron Technology Inc
		MT29F4G08ABAFAWP-IT:F Micron Technology Inc
		MT29F4G08ABBEAH4-IT:E Micron Technology Inc
		MT29F4G08ABAEAWP-IT:E Micron Technology Inc

				Most Relevant							Technical																										Compliance			Operating Conditions					Physical											Dimensions			Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Sector Size	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Clock Frequency-Max (fCLK)	Memory IC Type	Command User Interface	Data Polling	Data Retention Time-Min	Endurance	Number of Functions	Number of Sectors/Size	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Page Size	Parallel/Serial	Programming Voltage	Ready/Busy	Serial Bus Type	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	Toggle Bit	Type	Write Cycle Time-Max (tWC)	Write Protection	JESD-30 Code	Qualification Status	JESD-609 Code	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Screening Level	Time@Peak Reflow Temperature-Max (s)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Package Description	Reach Compliance Code	Samacsys Manufacturer	ECCN Code	HTS Code	Date Of Intro

$2.9452

Active

4.295 Gbit

512MX8

3.3 V

133 MHz

FLASH

100000 Write/Erase Cycles

512000000

536.8709 M

SYNCHRONOUS

3-STATE

SERIAL

3.3 V

QSPI

50 µA

35 µA

3.6 V

2.7 V

CMOS

SLC NAND TYPE

HARDWARE/SOFTWARE

R-PBGA-B24

105 °C

-40 °C

AEC-Q100

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

YES

BALL

1 mm

BOTTOM

1.2 mm

8 mm

6 mm

MICRON TECHNOLOGY INC

TBGA-24

compliant

Micron

$3.0600

Active

4.295 Gbit

512MX8

1.8 V

133 MHz

FLASH

100000 Write/Erase Cycles

512000000

536.8709 M

SYNCHRONOUS

3-STATE

SERIAL

1.8 V

QSPI

50 µA

35 µA

1.95 V

1.7 V

CMOS

SLC NAND TYPE

HARDWARE/SOFTWARE

R-PBGA-B24

105 °C

-40 °C

AEC-Q100

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

YES

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

1.2 mm

8 mm

6 mm

MICRON TECHNOLOGY INC

TBGA-24

compliant

Micron

$3.0600

Active

4.295 Gbit

256K

512MX8

1.8 V

FLASH

YES

100000 Write/Erase Cycles

512000000

536.8709 M

ASYNCHRONOUS

4K words

PARALLEL

1.8 V

YES

50 µA

35 µA

1.95 V

1.7 V

CMOS

INDUSTRIAL

SLC NAND TYPE

30 ns

R-PBGA-B63

105 °C

-40 °C

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

YES

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

800 µm

BOTTOM

1 mm

11 mm

9 mm

MICRON TECHNOLOGY INC

VFBGA-63

compliant

Micron

$3.1150

Yes

Active

4.295 Gbit

256K

512MX8

1.8 V

FLASH

YES

100000 Write/Erase Cycles

512000000

536.8709 M

ASYNCHRONOUS

4K words

PARALLEL

1.8 V

YES

50 µA

35 µA

1.95 V

1.7 V

CMOS

INDUSTRIAL

SLC NAND TYPE

30 ns

R-PBGA-B63

85 °C

-40 °C

260

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1 mm

11 mm

9 mm

MICRON TECHNOLOGY INC

VFBGA-63

compliant

Micron

$3.2758

Active

4.295 Gbit

256MX16

1.8 V

FLASH

256000000

268.4355 M

1.8 V

CMOS

SLC NAND TYPE

R-PBGA-B63

105 °C

-40 °C

260

PLASTIC/EPOXY

RECTANGULAR

YES

TIN SILVER COPPER

BALL

BOTTOM

MICRON TECHNOLOGY INC

compliant

Micron

EAR99

8542.32.00.51

2020-03-31

$3.3999

Yes

Active

4.295 Gbit

128K

512MX8

3.3 V

25 ns

FLASH

YES

512000000

536.8709 M

ASYNCHRONOUS

2K words

PARALLEL

3.3 V

YES

100 µA

35 µA

3.6 V

2.7 V

CMOS

COMMERCIAL

SLC NAND TYPE

R-PBGA-B63

Not Qualified

70 °C

NOT SPECIFIED

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1 mm

11 mm

9 mm

MICRON TECHNOLOGY INC

9 X 11 MM, 1 MM HEIGHT, VFBGA-63

compliant

Micron

EAR99

8542.32.00.51

$3.7271

Yes

Active

4.295 Gbit

128K

512MX8

3.3 V

25 ns

FLASH

YES

512000000

536.8709 M

ASYNCHRONOUS

2K words

PARALLEL

3.3 V

YES

100 µA

35 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

SLC NAND TYPE

R-PBGA-B63

Not Qualified

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1 mm

11 mm

9 mm

MICRON TECHNOLOGY INC

9 X 11 MM, 1 MM HEIGHT, VFBGA-63

compliant

Micron

EAR99

8542.32.00.51

$3.7708

Yes

Active

FLASH

3.3 V

NOT SPECIFIED

MICRON TECHNOLOGY INC

compliant

Micron

EAR99

8542.32.00.51

$3.8050

Obsolete

FLASH

3.3 V

SLC NAND TYPE

MICRON TECHNOLOGY INC

unknown

Micron

EAR99

8542.32.00.51

$4.1215

Obsolete

FLASH

3.3 V

SLC NAND TYPE

NOT SPECIFIED

MICRON TECHNOLOGY INC

compliant

Micron

EAR99

8542.32.00.51

1 2 3 4 5 Next

Compare

MT29F4G01ABAFD12-AAT:F

Micron Technology Inc

$2.9452

Active

4.295 Gbit

512MX8

3.3 V

133 MHz

FLASH

100000 Write/Erase Cycles

512000000

536.8709 M

SYNCHRONOUS

3-STATE

SERIAL

3.3 V

QSPI

50 µA

35 µA

3.6 V

2.7 V

CMOS

SLC NAND TYPE

HARDWARE/SOFTWARE

R-PBGA-B24

105 °C

-40 °C

AEC-Q100

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

YES

BALL

1 mm

BOTTOM

1.2 mm

8 mm

6 mm

MICRON TECHNOLOGY INC

TBGA-24

compliant

Micron

MT29F4G01ABBFD12-AAT:F

Micron Technology Inc

$3.0600

Active

4.295 Gbit

512MX8

1.8 V

133 MHz

FLASH

100000 Write/Erase Cycles

512000000

536.8709 M

SYNCHRONOUS

3-STATE

SERIAL

1.8 V

QSPI

50 µA

35 µA

1.95 V

1.7 V

CMOS

SLC NAND TYPE

HARDWARE/SOFTWARE

R-PBGA-B24

105 °C

-40 °C

AEC-Q100

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

YES

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

1.2 mm

8 mm

6 mm

MICRON TECHNOLOGY INC

TBGA-24

compliant

Micron

MT29F4G08ABBFAH4-AAT:F

Micron Technology Inc

$3.0600

Active

4.295 Gbit

256K

512MX8

1.8 V

FLASH

YES

100000 Write/Erase Cycles

512000000

536.8709 M

ASYNCHRONOUS

4K words

PARALLEL

1.8 V

YES

50 µA

35 µA

1.95 V

1.7 V

CMOS

INDUSTRIAL

SLC NAND TYPE

30 ns

R-PBGA-B63

105 °C

-40 °C

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

YES

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

800 µm

BOTTOM

1 mm

11 mm

9 mm

MICRON TECHNOLOGY INC

VFBGA-63

compliant

Micron

MT29F4G08ABBFAH4-IT:F

Micron Technology Inc

$3.1150

Yes

Active

4.295 Gbit

256K

512MX8

1.8 V

FLASH

YES

100000 Write/Erase Cycles

512000000

536.8709 M

ASYNCHRONOUS

4K words

PARALLEL

1.8 V

YES

50 µA

35 µA

1.95 V

1.7 V

CMOS

INDUSTRIAL

SLC NAND TYPE

30 ns

R-PBGA-B63

85 °C

-40 °C

260

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE

YES

TIN SILVER COPPER

BALL

800 µm

BOTTOM

1 mm

11 mm

9 mm

MICRON TECHNOLOGY INC

VFBGA-63

compliant

Micron

MT29F4G16ABBFAH4-AAT:F

Micron Technology Inc

$3.2758

Active

4.295 Gbit

256MX16

1.8 V

FLASH

256000000

268.4355 M

1.8 V

CMOS

SLC NAND TYPE

R-PBGA-B63

105 °C

-40 °C

260

PLASTIC/EPOXY

RECTANGULAR

YES

TIN SILVER COPPER

BALL

BOTTOM

MICRON TECHNOLOGY INC

compliant

Micron

EAR99

8542.32.00.51

2020-03-31

MT29F4G08ABADAH4:D

Micron Technology Inc

$3.3999

Yes

Active

4.295 Gbit

128K

512MX8

3.3 V

25 ns

FLASH

YES

512000000

536.8709 M

ASYNCHRONOUS

2K words

PARALLEL

3.3 V

YES

100 µA

35 µA

3.6 V

2.7 V

CMOS

COMMERCIAL

SLC NAND TYPE

R-PBGA-B63

Not Qualified

70 °C

NOT SPECIFIED

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1 mm

11 mm

9 mm

MICRON TECHNOLOGY INC

9 X 11 MM, 1 MM HEIGHT, VFBGA-63

compliant

Micron

EAR99

8542.32.00.51

MT29F4G08ABADAH4-IT:D

Micron Technology Inc

$3.7271

Yes

Active

4.295 Gbit

128K

512MX8

3.3 V

25 ns

FLASH

YES

512000000

536.8709 M

ASYNCHRONOUS

2K words

PARALLEL

3.3 V

YES

100 µA

35 µA

3.6 V

2.7 V

CMOS

INDUSTRIAL

SLC NAND TYPE

R-PBGA-B63

Not Qualified

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1 mm

11 mm

9 mm

MICRON TECHNOLOGY INC

9 X 11 MM, 1 MM HEIGHT, VFBGA-63

compliant

Micron

EAR99

8542.32.00.51

MT29F4G08ABAFAWP-IT:F

Micron Technology Inc

$3.7708

Yes

Active

FLASH

3.3 V

NOT SPECIFIED

MICRON TECHNOLOGY INC

compliant

Micron

EAR99

8542.32.00.51

MT29F4G08ABBEAH4-IT:E

Micron Technology Inc

$3.8050

Obsolete

FLASH

3.3 V

SLC NAND TYPE

MICRON TECHNOLOGY INC

unknown

Micron

EAR99

8542.32.00.51

MT29F4G08ABAEAWP-IT:E

Micron Technology Inc

$4.1215

Obsolete

FLASH

3.3 V

SLC NAND TYPE

NOT SPECIFIED

MICRON TECHNOLOGY INC

compliant

Micron

EAR99

8542.32.00.51

1 2 3 4 5 Next