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MSMBJ18AE3
Microchip Technology Inc
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Check for Price | Yes | Active | 1.38 W | SILICON | 20 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 18 V | 1 | AVALANCHE | HIGH RELIABILITY | 22.1 V | 600 W | Not Qualified | R-PDSO-J2 | e3 | DO-214AA | 1 | 150 °C | -65 °C | 260 | 10 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | J BEND | DUAL | MICROCHIP TECHNOLOGY INC | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN | not_compliant | |||||||||
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MSMBJ18AE3/TR
Microsemi Corporation
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Check for Price | Yes | Transferred | 29.2 V | 1.38 W | 21.05 V | SILICON | 20 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 18 V | 1 | AVALANCHE | HIGH RELIABILITY | 22.1 V | 600 W | Not Qualified | R-PDSO-C2 | e3 | DO-214AA | 1 | 150 °C | -65 °C | 250 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | C BEND | DUAL | MICROSEMI CORP | R-PDSO-C2 | not_compliant | EAR99 | 8541.10.00.50 | |||||
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MSMBJ18AE3
Microsemi Corporation
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Check for Price | Yes | Yes | Transferred | 1.38 W | SILICON | 20 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 18 V | 1 | AVALANCHE | HIGH RELIABILITY | 22.1 V | 600 W | Not Qualified | R-PDSO-J2 | e3 | DO-214AA | 1 | 150 °C | -65 °C | 250 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | J BEND | DUAL | MICROSEMI CORP | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN | not_compliant | EAR99 | 8541.10.00.50 | DO-214AA | 2 | ||||
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MSMBJ18AE3TR
Microsemi Corporation
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Check for Price | Yes | Yes | Transferred | 29.2 V | 1.38 W | 21.05 V | SILICON | 20 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 18 V | 1 | AVALANCHE | HIGH RELIABILITY | 22.1 V | 600 W | Not Qualified | R-PDSO-C2 | e3 | DO-214AA | 1 | 150 °C | -65 °C | 250 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | C BEND | DUAL | MICROSEMI CORP | R-PDSO-C2 | unknown | EAR99 | 8541.10.00.50 | DO-214AA | 2 |