Parametric results for: mrfe6vp6300hr311 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

SOURCE 4

4 hits Apply

Configuration (1)

COMMON SOURCE, 2 ELEMENTS 4

4 hits Apply

DS Breakdown Voltage-Min (1)

130 V 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 4

4 hits Apply

R-CDFM-F4 4

4 hits Apply

Manufacturer (2)

Freescale Semiconductor 2 NXP Semiconductors 2

4 hits Apply

Number of Elements (1)

2 4

4 hits Apply

Number of Terminals (1)

4 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

225.0 °C 4

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Not Recommended 1 Obsolete 1 Transferred 2

4 hits Apply

Yes 2

4 hits Apply

260 4

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply