Parametric results for: mrf175gv under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

SOURCE 4

6 hits Apply

Configuration (2)

COMMON SOURCE, 2 ELEMENTS 3 SINGLE 1

6 hits Apply

DS Breakdown Voltage-Min (1)

65 V 4

6 hits Apply

Drain Current-Max (Abs) (ID) (1)

26 A 1

6 hits Apply

Drain Current-Max (ID) (1)

26 A 4

6 hits Apply

Drain-source On Resistance-Max (1)

300 mΩ 2

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 4

6 hits Apply

R-CDFM-F4 4

6 hits Apply

Manufacturer (6)

Advanced Semiconductor Inc 1 Freescale Semiconductor 1 MACOM 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 New Jersey Semiconductor Products Inc 1

6 hits Apply

Number of Elements (2)

1 1 2 3

Min - Max

6 hits Apply

Number of Terminals (1)

4 4

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

200.0 °C 5

6 hits Apply

CERAMIC, METAL-SEALED COFIRED 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

FLANGE MOUNT 4

6 hits Apply

Active 2 Contact Manufacturer 1 Obsolete 1 Transferred 2

6 hits Apply

Yes 1

6 hits Apply

NOT SPECIFIED 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

400 W 2

6 hits Apply

200 W 3 400 W 2

Min (W) - Max (W)

6 hits Apply

Power Gain-Min (Gp) (1)

12.0 dB 2

6 hits Apply

Surface Mount (2)

NO 1 YES 4

6 hits Apply