Parametric results for: mgfk35v4045 under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

HIGH RELIABILITY 1

3 hits Apply

SOURCE 3

3 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN RESISTOR 1

3 hits Apply

DS Breakdown Voltage-Min (1)

10 V 1

3 hits Apply

Drain Current-Max (ID) (3)

1.2 A 1 2.8 A 1 3.5 A 1

Min (A) - Max (A)

3 hits Apply

JUNCTION 3

3 hits Apply

Highest Frequency Band (1)

KU BAND 3

3 hits Apply

R-CDFM-F2 3

3 hits Apply

Manufacturer (1)

Mitsubishi Electric 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

2 3

3 hits Apply

DEPLETION MODE 3

3 hits Apply

175.0 °C 3

3 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Obsolete 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

33 W 1 33.3 W 1

Min (W) - Max (W)

3 hits Apply

Power Gain-Min (Gp) (1)

5.5 dB 2

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply