Parametric results for: mgfc42v under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

HIGH RELIABILITY 17 HIGH RELIABILITY, HIGH EFFICIENCY 3

40 hits Apply

SOURCE 34

40 hits Apply

Configuration (1)

SINGLE 34

40 hits Apply

DS Breakdown Voltage-Min (1)

10 V 10

40 hits Apply

Drain Current-Max (ID) (3)

4.5 A 10 12 A 26 15 A 4

Min (A) - Max (A)

40 hits Apply

JUNCTION 34 METAL SEMICONDUCTOR 6

40 hits Apply

Highest Frequency Band (3)

C BAND 30 S BAND 1 X BAND 3

40 hits Apply

R-CDFM-F2 31 R-XDFM-F2 3

40 hits Apply

Manufacturer (1)

Mitsubishi Electric 40

40 hits Apply

Number of Elements (1)

1 34

40 hits Apply

Number of Terminals (1)

2 34

40 hits Apply

DEPLETION MODE 34

40 hits Apply

175.0 °C 36

40 hits Apply

CERAMIC, METAL-SEALED COFIRED 31 UNSPECIFIED 3

40 hits Apply

RECTANGULAR 34

40 hits Apply

FLANGE MOUNT 34

40 hits Apply

Active 1 Obsolete 39

40 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 40

40 hits Apply

78.9 W 18 79 W 7 93.7 W 11

Min (W) - Max (W)

40 hits Apply

Power Gain-Min (Gp) (4)

6.0 dB 2 7.0 dB 4 8.0 dB 4 9.0 dB 4

Min (dB) - Max (dB)

40 hits Apply

Surface Mount (1)

YES 34

40 hits Apply