Parametric results for: mg75j6es50 under IGBTs

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration Fall Time-Max (tf) Gate-Emitter Thr Voltage-Max Gate-Emitter Voltage-Max JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH SPEED 1

1 hit Apply

ISOLATED 1

1 hit Apply

Collector Current-Max (IC) (1)

75 A 1

1 hit Apply

Collector-Emitter Voltage-Max (1)

600 V 1

1 hit Apply

Configuration (1)

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE 1

1 hit Apply

300 ns 1

1 hit Apply

Gate-Emitter Thr Voltage-Max (1)

8 V 1

1 hit Apply

20 V 1

1 hit Apply

R-XUFM-X19 1

1 hit Apply

Manufacturer (1)

Toshiba America Electronic Components 1

1 hit Apply

Number of Elements (1)

6 1

1 hit Apply

Number of Terminals (1)

19 1

1 hit Apply

150.0 °C 1

1 hit Apply

UNSPECIFIED 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Obsolete 1

1 hit Apply

No 1

1 hit Apply

NOT SPECIFIED 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

390 W 1

1 hit Apply

390 W 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply