Parametric results for: mg75g2dl1 under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

ISOLATED 1

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Collector Current-Max (IC) (1)

75 A 1

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Collector-Emitter Voltage-Max (1)

450 V 1

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Configuration (1)

2 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 1

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DC Current Gain-Min (hFE) (1)

80.0 1

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R-PUFM-X6 1

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Manufacturer (1)

Toshiba America Electronic Components 1

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Number of Elements (1)

2 1

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Number of Terminals (1)

6 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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FLANGE MOUNT 1

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Obsolete 1

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Polarity/Channel Type (1)

NPN 1

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Surface Mount (1)

NO 1

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