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MEM832VLMB-120
APTA Group Inc
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Check for Price | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 120 ns | EEPROM | NO | YES | 10000 Write/Erase Cycles | 32000 | 32.768 k | 64 words | PARALLEL | 300 µA | 133 µA | CMOS | MILITARY | YES | 10 ms | R-XDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC | DIP | DIP28,.1 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | APTA GROUP INC | DIP, DIP28,.1 | unknown | 3A001.A.2.C | 8542.32.00.51 | |||||||||||||
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MEM832VLMB-12
APTA Group Inc
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Check for Price | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 120 ns | EEPROM | NO | YES | 10000 Write/Erase Cycles | 32000 | 32.768 k | 64 words | PARALLEL | 300 µA | 80 µA | CMOS | MILITARY | YES | 10 ms | R-XDIP-T28 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 28 | CERAMIC | DIP | DIP28,.1 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | APTA GROUP INC | DIP, DIP28,.1 | unknown | 3A001.A.2.C | 8542.32.00.51 | |||||||||||||
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MEM832VLMB12
Hybrid Memory Products Ltd
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Check for Price | Contact Manufacturer | HYBRID MEMORY PRODUCTS LTD | , | unknown | EAR99 | 8542.32.00.51 | ||||||||||||||||||||||||||||||||||||||||||||||||||
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MEM832VLMB-120
Mosaic Semiconductor Inc
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Check for Price | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 120 ns | EEPROM | PAGE WRITE | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 5 V | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDIP-T28 | Not Qualified | 125 °C | -55 °C | 28 | CERAMIC, METAL-SEALED COFIRED | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 10.7 mm | 35.56 mm | 2.54 mm | MOSAIC SEMICONDUCTOR INC | DIP, | unknown | 3A001.A.2.C | 8542.32.00.51 | DIP | 28 |