Parametric results for: mem832vlmb12 under EEPROMs

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Manufacturer Part Number: mem832vlmb12
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MEM832VLMB-120
APTA Group Inc
Check for Price No Obsolete 262.144 kbit 8 32KX8 5 V 120 ns EEPROM NO YES 10000 Write/Erase Cycles 32000 32.768 k 64 words PARALLEL 300 µA 133 µA CMOS MILITARY YES 10 ms R-XDIP-T28 Not Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 28 CERAMIC DIP DIP28,.1 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) THROUGH-HOLE 2.54 mm DUAL APTA GROUP INC DIP, DIP28,.1 unknown 3A001.A.2.C 8542.32.00.51
MEM832VLMB-12
APTA Group Inc
Check for Price No Obsolete 262.144 kbit 8 32KX8 5 V 120 ns EEPROM NO YES 10000 Write/Erase Cycles 32000 32.768 k 64 words PARALLEL 300 µA 80 µA CMOS MILITARY YES 10 ms R-XDIP-T28 Not Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 28 CERAMIC DIP DIP28,.1 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) THROUGH-HOLE 2.54 mm DUAL APTA GROUP INC DIP, DIP28,.1 unknown 3A001.A.2.C 8542.32.00.51
MEM832VLMB12
Hybrid Memory Products Ltd
Check for Price Contact Manufacturer HYBRID MEMORY PRODUCTS LTD , unknown EAR99 8542.32.00.51
MEM832VLMB-120
Mosaic Semiconductor Inc
Check for Price Obsolete 262.144 kbit 8 32KX8 5 V 120 ns EEPROM PAGE WRITE 1 32000 32.768 k ASYNCHRONOUS PARALLEL 5 V 5.5 V 4.5 V CMOS MILITARY R-CDIP-T28 Not Qualified 125 °C -55 °C 28 CERAMIC, METAL-SEALED COFIRED DIP RECTANGULAR IN-LINE NO THROUGH-HOLE 2.54 mm DUAL 10.7 mm 35.56 mm 2.54 mm MOSAIC SEMICONDUCTOR INC DIP, unknown 3A001.A.2.C 8542.32.00.51 DIP 28