Parametric results for: mem832jlmb12 under EEPROMs
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MEM832JLMB-120
APTA Group Inc
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Check for Price | No | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 120 ns | EEPROM | PAGE WRITE | NO | YES | 10000 Write/Erase Cycles | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 64 words | PARALLEL | 5 V | 300 µA | 133 µA | 5.5 V | 4.5 V | CMOS | MILITARY | YES | 10 ms | R-CQCC-J32 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 32 | CERAMIC, METAL-SEALED COFIRED | QCCJ | LDCC32,.45X.7 | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 13.97 mm | 11.43 mm | APTA GROUP INC | QFJ | QCCJ, LDCC32,.45X.7 | 32 | unknown | 3A001.A.2.C | 8542.32.00.51 | ||
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MEM832JLMB-12
APTA Group Inc
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Check for Price | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 120 ns | EEPROM | NO | YES | 10000 Write/Erase Cycles | 32000 | 32.768 k | 64 words | PARALLEL | 300 µA | 80 µA | CMOS | MILITARY | YES | 12 ms | R-XQCC-J32 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 32 | CERAMIC | QCCJ | LDCC32,.45X.7 | RECTANGULAR | CHIP CARRIER | YES | Tin/Lead (Sn/Pb) | J BEND | 1.27 mm | QUAD | APTA GROUP INC | QCCJ, LDCC32,.45X.7 | unknown | 3A001.A.2.C | 8542.32.00.51 | |||||||||||||
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MEM832JLMB12
Hybrid Memory Products Ltd
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Check for Price | Contact Manufacturer | HYBRID MEMORY PRODUCTS LTD | , | unknown | EAR99 | 8542.32.00.51 | ||||||||||||||||||||||||||||||||||||||||||||||||||
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MEM832JLMB-120
Mosaic Semiconductor Inc
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Check for Price | Transferred | 262.144 kbit | 8 | 32KX8 | 5 V | 120 ns | EEPROM | PAGE WRITE | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 5 V | 5.5 V | 4.5 V | CMOS | MILITARY | R-CQCC-J32 | Not Qualified | 125 °C | -55 °C | 32 | CERAMIC, METAL-SEALED COFIRED | QCCJ | RECTANGULAR | CHIP CARRIER | YES | J BEND | QUAD | MOSAIC SEMICONDUCTOR INC | , | unknown | 3A001.A.2.C | 8542.32.00.51 |