Parametric results for: mbm29sl800te90pbt under Flash Memories

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Manufacturer Part Number: mbm29sl800te90pbt
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MBM29SL800TE-90PBT
FUJITSU Limited
Check for Price Transferred 8.3886 Mbit 16 512KX16 1.8 V 90 ns FLASH 8 1 512000 524.288 k ASYNCHRONOUS PARALLEL 1.8 V 1.95 V 1.65 V CMOS INDUSTRIAL R-PBGA-B48 Not Qualified 85 °C -40 °C 48 PLASTIC/EPOXY BGA RECTANGULAR GRID ARRAY YES BALL BOTTOM FUJITSU LTD PLASTIC, FBGA-48 unknown EAR99 8542.32.00.51
MBM29SL800TE-90PBT-E1
Spansion
Check for Price Yes Obsolete 8.3886 Mbit 16 512KX16 1.8 V 90 ns FLASH 8 TOP 1 512000 524.288 k ASYNCHRONOUS PARALLEL 1.8 V 1.95 V 1.65 V CMOS INDUSTRIAL NOR TYPE R-PBGA-B48 Not Qualified e1 85 °C -40 °C 48 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 8 mm 6 mm SPANSION INC PLASTIC, FBGA-48 compliant EAR99 8542.32.00.51 BGA 48
MBM29SL800TE-90PBT
FUJITSU Semiconductor Limited
Check for Price Transferred 8.3886 Mbit 16 512KX16 1.8 V 90 ns FLASH 8 1 512000 524.288 k ASYNCHRONOUS PARALLEL 1.8 V 1.95 V 1.65 V CMOS INDUSTRIAL R-PBGA-B48 Not Qualified 85 °C -40 °C 48 PLASTIC/EPOXY BGA RECTANGULAR GRID ARRAY YES BALL BOTTOM FUJITSU LTD BGA, unknown EAR99 8542.32.00.51 BGA 48
MBM29SL800TE-90PBT
Spansion
Check for Price No Obsolete 8.3886 Mbit 16 16K,8K,32K,64K 512KX16 1.8 V 90 ns FLASH 8 TOP YES YES 100000 Write/Erase Cycles 1 1,2,1,15 512000 524.288 k ASYNCHRONOUS PARALLEL 1.8 V YES 5 µA 25 µA 1.95 V 1.65 V CMOS INDUSTRIAL YES NOR TYPE R-PBGA-B48 Not Qualified e0 85 °C -40 °C 48 PLASTIC/EPOXY TFBGA BGA48,6X8,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN LEAD BALL 800 µm BOTTOM 1.2 mm 8 mm 6 mm SPANSION INC PLASTIC, FBGA-48 compliant EAR99 8542.32.00.51 BGA 48