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M95128-RMN6TG/V
STMicroelectronics
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Check for Price | Yes | Yes | Obsolete | 131.072 kbit | 8 | 16KX8 | 5 V | 10 MHz | EEPROM | 100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION | 40 | 100000 Write/Erase Cycles | 1 | 16000 | 16.384 k | SYNCHRONOUS | SERIAL | SPI | 3 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE/SOFTWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | NICKEL PALLADIUM GOLD | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | STMICROELECTRONICS | SOIC | 0.150 INCH, LEAD FREE, PLASTIC, SO-8 | 8 | compliant | EAR99 | 8542.32.00.51 | ||
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M95128-RMN6TG
STMicroelectronics
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Check for Price | Yes | Yes | Active | 131.072 kbit | 8 | 16KX8 | 2.5 V | 2 MHz | EEPROM | 100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION | 40 | 100000 Write/Erase Cycles | 1 | 16000 | 16.384 k | SYNCHRONOUS | SERIAL | SPI | 300 nA | 1 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE/SOFTWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | NICKEL PALLADIUM GOLD | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | STMICROELECTRONICS | SOIC | SOP, SOP8,.25 | 8 | compliant | EAR99 | 8542.32.00.51 | ||
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M95128-RMN6TG/A
STMicroelectronics
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Check for Price | Yes | Yes | Obsolete | 131.072 kbit | 8 | 16KX8 | 5 V | 2 MHz | EEPROM | 40 | 1000000 Write/Erase Cycles | 1 | 16000 | 16.384 k | SYNCHRONOUS | SERIAL | SPI | 3 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE/SOFTWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | NICKEL PALLADIUM GOLD | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | STMICROELECTRONICS | SOIC | 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8 | 8 | compliant | EAR99 | 8542.32.00.51 | |||
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M95128-RMN6TG/P
STMicroelectronics
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Check for Price | Yes | Yes | Obsolete | 131.072 kbit | 8 | 16KX8 | 5 V | 2 MHz | EEPROM | 100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION | 40 | 1000000 Write/Erase Cycles | 1 | 16000 | 16.384 k | SYNCHRONOUS | SERIAL | SPI | 3 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE/SOFTWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | NICKEL PALLADIUM GOLD | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | STMICROELECTRONICS | SOIC | 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8 | 8 | compliant | EAR99 | 8542.32.00.51 |