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M36W832TE85ZA1S
STMicroelectronics
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Check for Price | Transferred | 33.5544 Mbit | 16 | 2MX16 | 3 V | MEMORY CIRCUIT | SRAM IS ORGANISED AS 512K X 16 | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 3.6 V | 2.7 V | CMOS | COMMERCIAL | R-PBGA-B66 | Not Qualified | 70 °C | 66 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 8 mm | STMICROELECTRONICS | BGA | LFBGA, | 66 | unknown | EAR99 | 8542.32.00.71 | |||||||||||
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M36W832TE85ZA1
STMicroelectronics
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Check for Price | No | Transferred | 33.5544 Mbit | 16 | 2MX16 | 3 V | 85 ns | MEMORY CIRCUIT | SRAM IS ORGANISED AS 512K X 16 | FLASH+SRAM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 20 µA | 35 µA | 3.6 V | 2.7 V | CMOS | COMMERCIAL | R-PBGA-B66 | Not Qualified | e0 | 70 °C | 66 | PLASTIC/EPOXY | LFBGA | BGA66,8X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 8 mm | STMICROELECTRONICS | BGA | 12 X 8 MM, 0.80 MM PITCH, LFBGA-66 | 66 | not_compliant | EAR99 | 8542.32.00.71 | |||
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M36W832T100ZA6
Numonyx Memory Solutions
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Check for Price | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 3 V | MEMORY CIRCUIT | ALSO CONTAINS 512K X 16 SRAM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 3.3 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B66 | Not Qualified | 85 °C | -40 °C | 66 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 8 mm | NUMONYX | BGA | LFBGA, | 66 | unknown | EAR99 | 8542.32.00.71 | ||||||||||
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M36W832TE70ZA6S
STMicroelectronics
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Check for Price | No | Transferred | 33.5544 Mbit | 16 | 2MX16 | 3 V | 70 ns | MEMORY CIRCUIT | SRAM IS ORGANISED AS 512K X 16 | FLASH+SRAM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 20 µA | 20 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B66 | Not Qualified | e0 | 85 °C | -40 °C | 66 | PLASTIC/EPOXY | LFBGA | BGA66,8X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 8 mm | STMICROELECTRONICS | BGA | 12 X 8 MM, 0.80 MM PITCH, LFBGA-66 | 66 | not_compliant | EAR99 | 8542.32.00.71 | ||
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M36W832TE70ZA1
Numonyx Memory Solutions
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Check for Price | No | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 3 V | MEMORY CIRCUIT | SRAM IS ORGANISED AS 512K X 16 | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 3.6 V | 2.7 V | CMOS | COMMERCIAL | R-PBGA-B66 | Not Qualified | e0 | 70 °C | 66 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 8 mm | NUMONYX | BGA | 12 X 8 MM, 0.80 MM PITCH, LFBGA-66 | 66 | not_compliant | EAR99 | 8542.32.00.71 | ||||||||
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M36W832TE70ZA1S
STMicroelectronics
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Check for Price | Transferred | 33.5544 Mbit | 16 | 2MX16 | 3 V | MEMORY CIRCUIT | SRAM IS ORGANISED AS 512K X 16 | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 3.6 V | 2.7 V | CMOS | COMMERCIAL | R-PBGA-B66 | Not Qualified | 70 °C | 66 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 8 mm | STMICROELECTRONICS | BGA | LFBGA, | 66 | unknown | EAR99 | 8542.32.00.71 | |||||||||||
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M36W832TE100ZA6T
Numonyx Memory Solutions
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Check for Price | No | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 3 V | MEMORY CIRCUIT | ALSO CONTAINS 512K X 16 SRAM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 3.3 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B66 | Not Qualified | e0 | 85 °C | -40 °C | 66 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | Tin/Lead (Sn/Pb) | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 8 mm | NUMONYX | BGA | 0.80 MM PITCH, STACK, LFBGA-66 | 66 | not_compliant | EAR99 | 8542.32.00.71 | |||||||
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M36W832TE100ZA1T
STMicroelectronics
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Check for Price | No | Transferred | 33.5544 Mbit | 16 | 2MX16 | 3 V | 100 ns | MEMORY CIRCUIT | ALSO CONTAINS 512K X 16 SRAM | FLASH+SRAM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 20 µA | 35 µA | 3.3 V | 2.7 V | CMOS | COMMERCIAL | R-PBGA-B66 | Not Qualified | e0 | 70 °C | 66 | PLASTIC/EPOXY | LFBGA | BGA66,8X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 8 mm | STMICROELECTRONICS | BGA | 0.80 MM PITCH, STACK, LFBGA-66 | 66 | not_compliant | EAR99 | 8542.32.00.71 | |||
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M36W832T85ZA6
Numonyx Memory Solutions
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Check for Price | Obsolete | 33.5544 Mbit | 16 | 2MX16 | 3 V | MEMORY CIRCUIT | ALSO CONTAINS 512K X 16 SRAM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 3.3 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B66 | Not Qualified | 85 °C | -40 °C | 66 | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 8 mm | NUMONYX | BGA | LFBGA, | 66 | unknown | EAR99 | 8542.32.00.71 | ||||||||||
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M36W832TE85ZA6
STMicroelectronics
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Check for Price | No | Transferred | 33.5544 Mbit | 16 | 2MX16 | 3 V | 85 ns | MEMORY CIRCUIT | SRAM IS ORGANISED AS 512K X 16 | FLASH+SRAM | 1 | 2000000 | 2.0972 M | ASYNCHRONOUS | 20 µA | 35 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PBGA-B66 | Not Qualified | e0 | 85 °C | -40 °C | 66 | PLASTIC/EPOXY | LFBGA | BGA66,8X12,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.4 mm | 12 mm | 8 mm | STMICROELECTRONICS | BGA | 12 X 8 MM, 0.80 MM PITCH, LFBGA-66 | 66 | not_compliant | EAR99 | 8542.32.00.71 |