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M29W640GL70NB6F
STMicroelectronics
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Check for Price | Yes | Transferred | 67.1089 Mbit | 16 | 64K | 4MX16 | 3 V | 70 ns | FLASH | 8 | YES | YES | YES | 1 | 128 | 4000000 | 4.1943 M | ASYNCHRONOUS | 4/8 words | PARALLEL | 3 V | YES | 100 µA | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PDSO-G56 | Not Qualified | e3/e6 | 85 °C | -40 °C | 260 | 40 | 56 | PLASTIC/EPOXY | TSSOP | TSSOP56,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | MATTE TIN/TIN BISMUTH | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 14 mm | STMICROELECTRONICS | TSOP | 14 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-56 | 56 | unknown | EAR99 | 8542.32.00.51 | |||||
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M29W640GL70NB6F
Micron Technology Inc
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Check for Price | Yes | Yes | Obsolete | 67.1089 Mbit | 16 | 64K | 4MX16 | 3 V | 70 ns | FLASH | TOP BOOT BLOCK | 8 | TOP | YES | YES | YES | 1 | 128 | 4000000 | 4.1943 M | ASYNCHRONOUS | 4/8 words | PARALLEL | 3 V | YES | 100 µA | 20 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PDSO-G56 | Not Qualified | e3 | 85 °C | -40 °C | 56 | PLASTIC/EPOXY | TSSOP | TSSOP56,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | MATTE TIN | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 14 mm | MICRON TECHNOLOGY INC | TSOP | TSSOP, TSSOP56,.8,20 | 56 | compliant | EAR99 | 8542.32.00.51 | ||||
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M29W640GL70NB6F
Numonyx Memory Solutions
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Check for Price | Yes | Transferred | 67.1089 Mbit | 16 | 64K | 4MX16 | 3 V | 70 ns | FLASH | TOP BOOT BLOCK | 8 | TOP | YES | YES | YES | 1 | 128 | 4000000 | 4.1943 M | ASYNCHRONOUS | 4/8 words | PARALLEL | 3 V | YES | 100 µA | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PDSO-G56 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 56 | PLASTIC/EPOXY | TSSOP | TSSOP56,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 14 mm | NUMONYX | TSOP | TSSOP, TSSOP56,.8,20 | 56 | unknown | EAR99 | 8542.32.00.51 |