Parametric results for: m29dw640f70ze6t under Flash Memories

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Manufacturer Part Number: m29dw640f70ze6t
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M29DW640F70ZE6T
STMicroelectronics
Check for Price No Obsolete 67.1089 Mbit 16 8K,64K 4MX16 3 V 70 ns FLASH 100,000 PROGRAM/ERASE CYCLES 8 BOTTOM/TOP YES YES YES 1 16,126 4000000 4.1943 M ASYNCHRONOUS 4/8 words PARALLEL 3 V YES 100 µA 20 µA 3.6 V 2.7 V CMOS INDUSTRIAL YES NOR TYPE R-PBGA-B48 Not Qualified e0 85 °C -40 °C 48 PLASTIC/EPOXY TFBGA BGA48,6X8,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN LEAD BALL 800 µm BOTTOM 1.2 mm 8 mm 6 mm STMICROELECTRONICS BGA TFBGA, BGA48,6X8,32 48 not_compliant EAR99 8542.32.00.51
M29DW640F70ZE6T
Micron Technology Inc
Check for Price No Obsolete 67.1089 Mbit 16 8K,64K 4MX16 70 ns FLASH 8 BOTTOM/TOP YES YES YES 16,126 4000000 4.1943 M 4/8 words PARALLEL YES 100 µA 20 µA CMOS INDUSTRIAL YES NOR TYPE R-PBGA-B48 Not Qualified 85 °C -40 °C 48 PLASTIC/EPOXY FBGA BGA48,6X8,32 RECTANGULAR GRID ARRAY, FINE PITCH YES BALL 800 µm BOTTOM MICRON TECHNOLOGY INC FBGA, BGA48,6X8,32 unknown EAR99 8542.32.00.51
M29DW640F70ZE6T
Numonyx Memory Solutions
Check for Price No Obsolete 67.1089 Mbit 16 8K,64K 4MX16 3 V 70 ns FLASH 8 BOTTOM/TOP YES YES YES 1 16,126 4000000 4.1943 M ASYNCHRONOUS 4/8 words PARALLEL 3 V YES 100 µA 20 µA 3.6 V 2.7 V CMOS INDUSTRIAL YES NOR TYPE R-PBGA-B48 Not Qualified 1 85 °C -40 °C 48 PLASTIC/EPOXY TFBGA BGA48,6X8,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 8 mm 6 mm NUMONYX BGA 6 X 8 MM, 0.80 MM PITCH, TFBGA-48 48 unknown EAR99 8542.32.00.51