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M10B11664A-30T
Elite Semiconductor Memory Technology Inc
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Check for Price | Obsolete | 1.0486 Mbit | 16 | 64KX16 | 5 V | 30 ns | 256 | FAST PAGE | FAST PAGE DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | COMMON | 1 | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | NO | 2 mA | 150 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-G40 | Not Qualified | 70 °C | 40 | PLASTIC/EPOXY | TSOP2 | TSOP40/44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TSOP2, TSOP40/44,.46,32 | unknown | EAR99 | 8542.32.00.02 | ||
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M10B11664A-30J
Elite Semiconductor Memory Technology Inc
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Check for Price | Obsolete | 1.0486 Mbit | 16 | 64KX16 | 5 V | 30 ns | 256 | FAST PAGE | FAST PAGE DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | COMMON | 1 | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | NO | 2 mA | 150 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-J40 | Not Qualified | 70 °C | 40 | PLASTIC/EPOXY | SOJ | SOJ40,.44 | RECTANGULAR | SMALL OUTLINE | YES | J BEND | 1.27 mm | DUAL | 3.76 mm | 26.04 mm | 10.16 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | SOJ, SOJ40,.44 | unknown | EAR99 | 8542.32.00.02 | ||
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M10B11664A-35J
Elite Semiconductor Memory Technology Inc
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Check for Price | Obsolete | 1.0486 Mbit | 16 | 64KX16 | 5 V | 35 ns | 256 | FAST PAGE | FAST PAGE DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | COMMON | 1 | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | NO | 2 mA | 130 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-J40 | Not Qualified | 70 °C | 40 | PLASTIC/EPOXY | SOJ | SOJ40,.44 | RECTANGULAR | SMALL OUTLINE | YES | J BEND | 1.27 mm | DUAL | 3.76 mm | 26.04 mm | 10.16 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | SOJ, SOJ40,.44 | unknown | EAR99 | 8542.32.00.02 | ||
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M10B11664A-35T
Elite Semiconductor Memory Technology Inc
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Check for Price | Obsolete | 1.0486 Mbit | 16 | 64KX16 | 5 V | 35 ns | 256 | FAST PAGE | FAST PAGE DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | COMMON | 1 | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | NO | 2 mA | 130 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-G40 | Not Qualified | 70 °C | 40 | PLASTIC/EPOXY | TSOP2 | TSOP40/44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TSOP2, TSOP40/44,.46,32 | unknown | EAR99 | 8542.32.00.02 | ||
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M10B11664A-40T
Elite Semiconductor Memory Technology Inc
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Check for Price | Obsolete | 1.0486 Mbit | 16 | 64KX16 | 5 V | 40 ns | 256 | FAST PAGE | FAST PAGE DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | COMMON | 1 | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | NO | 2 mA | 120 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-G40 | Not Qualified | 70 °C | 40 | PLASTIC/EPOXY | TSOP2 | TSOP40/44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TSOP2, TSOP40/44,.46,32 | unknown | EAR99 | 8542.32.00.02 | ||
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M10B11664A-25J
Elite Semiconductor Memory Technology Inc
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Check for Price | Obsolete | 1.0486 Mbit | 16 | 64KX16 | 5 V | 25 ns | 256 | FAST PAGE | FAST PAGE DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | COMMON | 1 | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | NO | 2 mA | 170 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-J40 | Not Qualified | 70 °C | 40 | PLASTIC/EPOXY | SOJ | SOJ40,.44 | RECTANGULAR | SMALL OUTLINE | YES | J BEND | 1.27 mm | DUAL | 3.76 mm | 26.04 mm | 10.16 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | SOJ, SOJ40,.44 | unknown | EAR99 | 8542.32.00.02 | ||
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M10B11664A-25T
Elite Semiconductor Memory Technology Inc
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Check for Price | Obsolete | 1.0486 Mbit | 16 | 64KX16 | 5 V | 25 ns | 256 | FAST PAGE | FAST PAGE DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | COMMON | 1 | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | NO | 2 mA | 170 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-G40 | Not Qualified | 70 °C | 40 | PLASTIC/EPOXY | TSOP2 | TSOP40/44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TSOP2, TSOP40/44,.46,32 | unknown | EAR99 | 8542.32.00.02 | ||
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M10B11664A-40J
Elite Semiconductor Memory Technology Inc
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Check for Price | Obsolete | 1.0486 Mbit | 16 | 64KX16 | 5 V | 40 ns | 256 | FAST PAGE | FAST PAGE DRAM | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | COMMON | 1 | 1 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | NO | 2 mA | 120 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-J40 | Not Qualified | 70 °C | 40 | PLASTIC/EPOXY | SOJ | SOJ40,.44 | RECTANGULAR | SMALL OUTLINE | YES | J BEND | 1.27 mm | DUAL | 3.76 mm | 26.04 mm | 10.16 mm | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | SOJ, SOJ40,.44 | unknown | EAR99 | 8542.32.00.02 |