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Parametric » Memory » DRAMs

Parametric results for: m10b11664a under DRAMs

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Manufacturer Part Number: m10b11664a
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M10B11664A-30T
 Elite Semiconductor Memory Technology Inc 		Check for Price Obsolete 1.0486 Mbit 16 64KX16 5 V 30 ns 256 FAST PAGE FAST PAGE DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH COMMON 1 1 64000 65.536 k ASYNCHRONOUS 3-STATE NO 2 mA 150 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PDSO-G40 Not Qualified 70 °C 40 PLASTIC/EPOXY TSOP2 TSOP40/44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC TSOP2, TSOP40/44,.46,32 unknown EAR99 8542.32.00.02
M10B11664A-30J
 Elite Semiconductor Memory Technology Inc 		Check for Price Obsolete 1.0486 Mbit 16 64KX16 5 V 30 ns 256 FAST PAGE FAST PAGE DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH COMMON 1 1 64000 65.536 k ASYNCHRONOUS 3-STATE NO 2 mA 150 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PDSO-J40 Not Qualified 70 °C 40 PLASTIC/EPOXY SOJ SOJ40,.44 RECTANGULAR SMALL OUTLINE YES J BEND 1.27 mm DUAL 3.76 mm 26.04 mm 10.16 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC SOJ, SOJ40,.44 unknown EAR99 8542.32.00.02
M10B11664A-35J
 Elite Semiconductor Memory Technology Inc 		Check for Price Obsolete 1.0486 Mbit 16 64KX16 5 V 35 ns 256 FAST PAGE FAST PAGE DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH COMMON 1 1 64000 65.536 k ASYNCHRONOUS 3-STATE NO 2 mA 130 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PDSO-J40 Not Qualified 70 °C 40 PLASTIC/EPOXY SOJ SOJ40,.44 RECTANGULAR SMALL OUTLINE YES J BEND 1.27 mm DUAL 3.76 mm 26.04 mm 10.16 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC SOJ, SOJ40,.44 unknown EAR99 8542.32.00.02
M10B11664A-35T
 Elite Semiconductor Memory Technology Inc 		Check for Price Obsolete 1.0486 Mbit 16 64KX16 5 V 35 ns 256 FAST PAGE FAST PAGE DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH COMMON 1 1 64000 65.536 k ASYNCHRONOUS 3-STATE NO 2 mA 130 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PDSO-G40 Not Qualified 70 °C 40 PLASTIC/EPOXY TSOP2 TSOP40/44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC TSOP2, TSOP40/44,.46,32 unknown EAR99 8542.32.00.02
M10B11664A-40T
 Elite Semiconductor Memory Technology Inc 		Check for Price Obsolete 1.0486 Mbit 16 64KX16 5 V 40 ns 256 FAST PAGE FAST PAGE DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH COMMON 1 1 64000 65.536 k ASYNCHRONOUS 3-STATE NO 2 mA 120 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PDSO-G40 Not Qualified 70 °C 40 PLASTIC/EPOXY TSOP2 TSOP40/44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC TSOP2, TSOP40/44,.46,32 unknown EAR99 8542.32.00.02
M10B11664A-25J
 Elite Semiconductor Memory Technology Inc 		Check for Price Obsolete 1.0486 Mbit 16 64KX16 5 V 25 ns 256 FAST PAGE FAST PAGE DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH COMMON 1 1 64000 65.536 k ASYNCHRONOUS 3-STATE NO 2 mA 170 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PDSO-J40 Not Qualified 70 °C 40 PLASTIC/EPOXY SOJ SOJ40,.44 RECTANGULAR SMALL OUTLINE YES J BEND 1.27 mm DUAL 3.76 mm 26.04 mm 10.16 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC SOJ, SOJ40,.44 unknown EAR99 8542.32.00.02
M10B11664A-25T
 Elite Semiconductor Memory Technology Inc 		Check for Price Obsolete 1.0486 Mbit 16 64KX16 5 V 25 ns 256 FAST PAGE FAST PAGE DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH COMMON 1 1 64000 65.536 k ASYNCHRONOUS 3-STATE NO 2 mA 170 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PDSO-G40 Not Qualified 70 °C 40 PLASTIC/EPOXY TSOP2 TSOP40/44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC TSOP2, TSOP40/44,.46,32 unknown EAR99 8542.32.00.02
M10B11664A-40J
 Elite Semiconductor Memory Technology Inc 		Check for Price Obsolete 1.0486 Mbit 16 64KX16 5 V 40 ns 256 FAST PAGE FAST PAGE DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH COMMON 1 1 64000 65.536 k ASYNCHRONOUS 3-STATE NO 2 mA 120 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PDSO-J40 Not Qualified 70 °C 40 PLASTIC/EPOXY SOJ SOJ40,.44 RECTANGULAR SMALL OUTLINE YES J BEND 1.27 mm DUAL 3.76 mm 26.04 mm 10.16 mm ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC SOJ, SOJ40,.44 unknown EAR99 8542.32.00.02