Parametric results for: ln100la-g under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount Configuration (1)

SERIES, 2 ELEMENTS 2

2 hits Apply

DS Breakdown Voltage-Min (1)

600 V 2

2 hits Apply

Drain-source On Resistance-Max (1)

3 kΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

S-PBGA-B6 2

2 hits Apply

e3 2

2 hits Apply

Manufacturer (2)

Microchip Technology Inc 1 Supertex Inc 1

2 hits Apply

Number of Elements (1)

2 2

2 hits Apply

Number of Terminals (1)

6 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

125.0 °C 2

2 hits Apply

-25.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

SQUARE 2

2 hits Apply

GRID ARRAY 2

2 hits Apply

Active 1 Transferred 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

350 mW 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply