Parametric results for: lf2812 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

LOW NOISE 2

2 hits Apply

SOURCE 2

2 hits Apply

Configuration (1)

SINGLE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

65 V 2

2 hits Apply

Drain Current-Max (ID) (1)

2.8 A 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

4.8 pF 1

2 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 2

2 hits Apply

R-CDFM-F2 2

2 hits Apply

Manufacturer (2)

MACOM 1 TE Connectivity 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

2 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

200.0 °C 2

2 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Obsolete 1 Transferred 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

26.5 W 1

2 hits Apply

26.5 W 1

2 hits Apply

Power Gain-Min (Gp) (1)

10.0 dB 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply