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KM718V889T-60
Samsung Semiconductor
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Check for Price | No | Obsolete | 4.7186 Mbit | 18 | 256KX18 | 3.3 V | 3.5 ns | 166 MHz | CACHE SRAM | LINEAR OR INTERLEAVED BURST | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.14 V | 425 µA | 3.6 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 70 °C | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | TIN LEAD | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, QFP100,.63X.87 | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | 12 | 499.175 | 5990.1 | 12 | Commercial: +0C to +70C | ||||
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KM718V889-60
Samsung Semiconductor
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Check for Price | Obsolete | 4.7186 Mbit | 18 | 256KX18 | 3.3 V | 3.5 ns | CACHE SRAM | SELF TIMED WRITE CYCLE; BYTE WRITE | 1 | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | YES | PARALLEL | 3.6 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | 70 °C | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | 12 | 499.175 | 5990.1 | 12 | Commercial: +0C to +70C | |||||||||||
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KM718V889T-85
Samsung Semiconductor
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Check for Price | No | Obsolete | 4.7186 Mbit | 18 | 256KX18 | 3.3 V | 4 ns | 117 MHz | CACHE SRAM | LINEAR OR INTERLEAVED BURST | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.14 V | 350 µA | 3.6 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 70 °C | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | TIN LEAD | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, QFP100,.63X.87 | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | 12 | 499.175 | 5990.1 | 12 | Commercial: +0C to +70C | ||||
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KM718V889-67
Samsung Semiconductor
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Check for Price | Obsolete | 4.7186 Mbit | 18 | 256KX18 | 3.3 V | 3.8 ns | CACHE SRAM | SELF TIMED WRITE CYCLE; BYTE WRITE | 1 | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | YES | PARALLEL | 3.6 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | 70 °C | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | 12 | 499.175 | 5990.1 | 12 | Commercial: +0C to +70C | |||||||||||
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KM718V889T-67
Samsung Semiconductor
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Check for Price | No | Obsolete | 4.7186 Mbit | 18 | 256KX18 | 3.3 V | 3.8 ns | 149 MHz | CACHE SRAM | LINEAR OR INTERLEAVED BURST | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.14 V | 400 µA | 3.6 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 70 °C | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | TIN LEAD | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, QFP100,.63X.87 | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | 12 | 499.175 | 5990.1 | 12 | Commercial: +0C to +70C | ||||
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KM718V889-72
Samsung Semiconductor
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Check for Price | Obsolete | 4.7186 Mbit | 18 | 256KX18 | 3.3 V | 4 ns | CACHE SRAM | SELF TIMED WRITE CYCLE; BYTE WRITE | 1 | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | YES | PARALLEL | 3.6 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | 70 °C | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | 12 | 499.175 | 5990.1 | 12 | Commercial: +0C to +70C | |||||||||||
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KM718V889T-72
Samsung Semiconductor
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Check for Price | No | Obsolete | 4.7186 Mbit | 18 | 256KX18 | 3.3 V | 4 ns | 138 MHz | CACHE SRAM | LINEAR OR INTERLEAVED BURST | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 3.14 V | 375 µA | 3.6 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 70 °C | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | TIN LEAD | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, QFP100,.63X.87 | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | 12 | 499.175 | 5990.1 | 12 | Commercial: +0C to +70C | ||||
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KM718V889-85
Samsung Semiconductor
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Check for Price | Obsolete | 4.7186 Mbit | 18 | 256KX18 | 3.3 V | 4 ns | CACHE SRAM | SELF TIMED WRITE CYCLE; BYTE WRITE | 1 | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | YES | PARALLEL | 3.6 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | 70 °C | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | SAMSUNG SEMICONDUCTOR INC | QFP | LQFP, | 100 | unknown | 3A991.B.2.A | 8542.32.00.41 | 12 | 499.175 | 5990.1 | 12 | Commercial: +0C to +70C |