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Parametric » Memory » DRAMs

Parametric results for: km416v256dt under DRAMs

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Manufacturer Part Number: km416v256dt
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KM416V256DT-L6
 Samsung Semiconductor 		Check for Price No Obsolete 4.1943 Mbit 16 256KX16 3.3 V 3.3 V 60 ns 512 FAST PAGE FAST PAGE DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH COMMON 1 1 256000 262.144 k ASYNCHRONOUS 3-STATE YES 100 µA 90 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G40 Not Qualified e0 70 °C 40 PLASTIC/EPOXY TSOP2 TSOP40/44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin/Lead (Sn/Pb) GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 TSOP2, TSOP40/44,.46,32 44 unknown
KM416V256DT-L7
 Samsung Semiconductor 		Check for Price No Obsolete 4.1943 Mbit 16 256KX16 3.3 V 3.3 V 70 ns 512 FAST PAGE FAST PAGE DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH COMMON 1 1 256000 262.144 k ASYNCHRONOUS 3-STATE YES 100 µA 80 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G40 Not Qualified e0 70 °C 40 PLASTIC/EPOXY TSOP2 TSOP40/44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin/Lead (Sn/Pb) GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 0.400 INCH, TSOP2-44/40 44 unknown
KM416V256D-T6
 Samsung Semiconductor 		Check for Price No Obsolete 4.1943 Mbit 16 256KX16 3.3 V 60 ns 512 FAST PAGE FAST PAGE DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH COMMON 1 1 256000 262.144 k ASYNCHRONOUS 3-STATE NO 500 µA 90 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G40 Not Qualified e0 70 °C 40 PLASTIC/EPOXY TSOP2 TSOP40/44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin/Lead (Sn/Pb) GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 TSOP2, TSOP40/44,.46,32 44 unknown EAR99 8542.32.00.02
KM416V256D-T7
 Samsung Semiconductor 		Check for Price No Obsolete 4.1943 Mbit 16 256KX16 3.3 V 70 ns 512 FAST PAGE FAST PAGE DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH COMMON 1 1 256000 262.144 k ASYNCHRONOUS 3-STATE NO 500 µA 80 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G40 Not Qualified e0 70 °C 40 PLASTIC/EPOXY TSOP2 TSOP40/44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin/Lead (Sn/Pb) GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 TSOP2, TSOP40/44,.46,32 44 unknown EAR99 8542.32.00.02
KM416V256DT-L8
 Samsung Semiconductor 		Check for Price No Obsolete 4.1943 Mbit 16 256KX16 3.3 V 80 ns 512 FAST PAGE DRAM COMMON 256000 262.144 k 3-STATE YES 100 µA 75 µA CMOS COMMERCIAL R-PDSO-G40 Not Qualified e0 70 °C 40 PLASTIC/EPOXY TSOP TSOP40/44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin/Lead (Sn/Pb) GULL WING 800 µm DUAL SAMSUNG SEMICONDUCTOR INC TSOP, TSOP40/44,.46,32 unknown EAR99 8542.32.00.02
KM416V256D-TL6
 Samsung Semiconductor 		Check for Price No Obsolete 4.1943 Mbit 16 256KX16 3.3 V 60 ns 512 FAST PAGE FAST PAGE DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH COMMON 1 1 256000 262.144 k ASYNCHRONOUS 3-STATE YES 100 µA 90 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G40 Not Qualified e0 70 °C 40 PLASTIC/EPOXY TSOP2 TSOP40/44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin/Lead (Sn/Pb) GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 TSOP2, TSOP40/44,.46,32 44 unknown EAR99 8542.32.00.02
KM416V256D-TL7
 Samsung Semiconductor 		Check for Price No Obsolete 4.1943 Mbit 16 256KX16 3.3 V 70 ns 512 FAST PAGE FAST PAGE DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH COMMON 1 1 256000 262.144 k ASYNCHRONOUS 3-STATE YES 100 µA 80 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G40 Not Qualified e0 70 °C 40 PLASTIC/EPOXY TSOP2 TSOP40/44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin/Lead (Sn/Pb) GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 TSOP2, TSOP40/44,.46,32 44 unknown EAR99 8542.32.00.02
KM416V256DT-7
 Samsung Semiconductor 		Check for Price No Obsolete 4.1943 Mbit 16 256KX16 3.3 V 3.3 V 70 ns 512 FAST PAGE FAST PAGE DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH COMMON 1 1 256000 262.144 k ASYNCHRONOUS 3-STATE NO 500 µA 80 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G40 Not Qualified e0 70 °C 40 PLASTIC/EPOXY TSOP2 TSOP40/44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin/Lead (Sn/Pb) GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 TSOP2, TSOP40/44,.46,32 44 unknown
KM416V256DT-6
 Samsung Semiconductor 		Check for Price No Obsolete 4.1943 Mbit 16 256KX16 3.3 V 3.3 V 60 ns 512 FAST PAGE FAST PAGE DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH COMMON 1 1 256000 262.144 k ASYNCHRONOUS 3-STATE NO 500 µA 90 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G40 Not Qualified e0 70 °C 40 PLASTIC/EPOXY TSOP2 TSOP40/44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin/Lead (Sn/Pb) GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 0.400 INCH, TSOP2-44/40 44 unknown
KM416V256DT-8
 Samsung Semiconductor 		Check for Price No No Obsolete 4.1943 Mbit 16 256KX16 3.3 V 80 ns 512 FAST PAGE FAST PAGE DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH COMMON 1 1 256000 262.144 k ASYNCHRONOUS 3-STATE NO 500 µA 75 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G40 Not Qualified e0 70 °C 40 PLASTIC/EPOXY TSOP2 TSOP40/44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN LEAD GULL WING 800 µm DUAL 1.2 mm 18.41 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 TSOP2, TSOP40/44,.46,32 44 unknown EAR99 8542.32.00.02