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Parametric » Memory » SRAMs

Parametric results for: k6t0808v1d-rd10 under SRAMs

Select parts from the table below to compare.

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Select Parts		Part Number

		K6T0808V1D-RD10T Samsung Semiconductor
		K6T0808V1D-RD100 Samsung Semiconductor
		K6T0808V1D-RD10 Samsung Semiconductor

			Most Relevant					Technical															Compliance			Operating Conditions		Physical											Dimensions			Other
Composite Price	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	I/O Type	Number of Functions	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Parallel/Serial	Reverse Pinout	Standby Voltage-Min	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Operating Temperature-Max	Operating Temperature-Min	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Package Description	Reach Compliance Code	ECCN Code	HTS Code	Part Package Code	Pin Count

Check for Price

No

Active

262.144 kbit

8

32KX8

3.3 V

100 ns

STANDARD SRAM

COMMON

32000

32.768 k

ASYNCHRONOUS

3-STATE

PARALLEL

YES

2 V

35 µA

CMOS

OTHER

R-PDSO-G28

Not Qualified

e0

85 °C

-25 °C

28

PLASTIC/EPOXY

TSSOP

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

Tin/Lead (Sn/Pb)

GULL WING

550 µm

DUAL

SAMSUNG SEMICONDUCTOR INC

TSSOP, TSSOP28,.53,22

compliant

EAR99

8542.32.00.41

Check for Price

No

Obsolete

262.144 kbit

8

32KX8

3.3 V

100 ns

STANDARD SRAM

1

32000

32.768 k

ASYNCHRONOUS

PARALLEL

3.6 V

3 V

CMOS

OTHER

R-PDSO-G28

Not Qualified

e0

85 °C

-25 °C

28

PLASTIC/EPOXY

TSOP1-R

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

YES

TIN LEAD

GULL WING

550 µm

DUAL

1.2 mm

11.8 mm

8 mm

SAMSUNG SEMICONDUCTOR INC

TSOP1-R,

compliant

EAR99

8542.32.00.41

TSOP

28

Check for Price

No

Obsolete

262.144 kbit

8

32KX8

3.3 V

100 ns

STANDARD SRAM

COMMON

1

32000

32.768 k

ASYNCHRONOUS

3-STATE

PARALLEL

YES

2 V

35 µA

3.6 V

3 V

CMOS

OTHER

R-PDSO-G28

Not Qualified

e0

85 °C

-25 °C

28

PLASTIC/EPOXY

TSOP1-R

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

YES

TIN LEAD

GULL WING

550 µm

DUAL

1.2 mm

11.8 mm

8 mm

SAMSUNG SEMICONDUCTOR INC

TSOP1-R, TSSOP28,.53,22

compliant

EAR99

8542.32.00.41

TSOP

28

Compare

K6T0808V1D-RD10T

Samsung Semiconductor

Check for Price

No

Active

262.144 kbit

8

32KX8

3.3 V

100 ns

STANDARD SRAM

COMMON

32000

32.768 k

ASYNCHRONOUS

3-STATE

PARALLEL

YES

2 V

35 µA

CMOS

OTHER

R-PDSO-G28

Not Qualified

e0

85 °C

-25 °C

28

PLASTIC/EPOXY

TSSOP

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

YES

Tin/Lead (Sn/Pb)

GULL WING

550 µm

DUAL

SAMSUNG SEMICONDUCTOR INC

TSSOP, TSSOP28,.53,22

compliant

EAR99

8542.32.00.41

K6T0808V1D-RD100

Samsung Semiconductor

Check for Price

No

Obsolete

262.144 kbit

8

32KX8

3.3 V

100 ns

STANDARD SRAM

1

32000

32.768 k

ASYNCHRONOUS

PARALLEL

3.6 V

3 V

CMOS

OTHER

R-PDSO-G28

Not Qualified

e0

85 °C

-25 °C

28

PLASTIC/EPOXY

TSOP1-R

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

YES

TIN LEAD

GULL WING

550 µm

DUAL

1.2 mm

11.8 mm

8 mm

SAMSUNG SEMICONDUCTOR INC

TSOP1-R,

compliant

EAR99

8542.32.00.41

TSOP

28

K6T0808V1D-RD10

Samsung Semiconductor

Check for Price

No

Obsolete

262.144 kbit

8

32KX8

3.3 V

100 ns

STANDARD SRAM

COMMON

1

32000

32.768 k

ASYNCHRONOUS

3-STATE

PARALLEL

YES

2 V

35 µA

3.6 V

3 V

CMOS

OTHER

R-PDSO-G28

Not Qualified

e0

85 °C

-25 °C

28

PLASTIC/EPOXY

TSOP1-R

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

YES

TIN LEAD

GULL WING

550 µm

DUAL

1.2 mm

11.8 mm

8 mm

SAMSUNG SEMICONDUCTOR INC

TSOP1-R, TSSOP28,.53,22

compliant

EAR99

8542.32.00.41

TSOP

28