Parametric results for: k4s641633fgl under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FOUR BANK PAGE BURST 3

3 hits Apply

Access Time-Max (2)

5.4 ns 1 7 ns 2

Min (ns) - Max (ns)

3 hits Apply

AUTO/SELF REFRESH 3

3 hits Apply

Clock Frequency-Max (fCLK) (2)

105 MHz 2 133 MHz 1

Min (MHz) - Max (MHz)

3 hits Apply

COMMON 3

3 hits Apply

1,2,4,8 3

3 hits Apply

R-PBGA-B52 3

3 hits Apply

11 mm 3

3 hits Apply

Manufacturer (1)

Samsung Semiconductor 3

3 hits Apply

Memory Density (1)

67.1089 Mbit 3

3 hits Apply

SYNCHRONOUS DRAM 3

3 hits Apply

Memory Width (1)

16 3

3 hits Apply

1.0 3

3 hits Apply

1 3

3 hits Apply

52 3

3 hits Apply

4.1943 M 3

3 hits Apply

4000000.0 3

3 hits Apply

SYNCHRONOUS 3

3 hits Apply

70.0 °C 3

3 hits Apply

-25.0 °C 3

3 hits Apply

Organization (1)

4MX16 3

3 hits Apply

3-STATE 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

VFBGA 3

3 hits Apply

BGA52,6X13,30 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

GRID ARRAY, VERY THIN PROFILE, FINE PITCH 3

3 hits Apply

Refresh Cycles (1)

4096 3

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

3 V 3

3 hits Apply