Parametric results for: k4s561632n-lc600 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FOUR BANK PAGE BURST 1

1 hit Apply

Access Time-Max (1)

5 ns 1

1 hit Apply

AUTO/SELF REFRESH 1

1 hit Apply

Clock Frequency-Max (fCLK) (1)

133 MHz 1

1 hit Apply

COMMON 1

1 hit Apply

1,2,4,8 1

1 hit Apply

R-PDSO-G54 1

1 hit Apply

22.22 mm 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

1 hit Apply

Memory Density (1)

268.4355 Mbit 1

1 hit Apply

SYNCHRONOUS DRAM 1

1 hit Apply

Memory Width (1)

16 1

1 hit Apply

1.0 1

1 hit Apply

1 1

1 hit Apply

54 1

1 hit Apply

16.7772 M 1

1 hit Apply

1.6E7 1

1 hit Apply

SYNCHRONOUS 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

16MX16 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

TSOP2 1

1 hit Apply

TSOP54,.46,32 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE, THIN PROFILE 1

1 hit Apply

Refresh Cycles (1)

8192 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply