Parametric results for: k4m28323ph-fc900 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FOUR BANK PAGE BURST 1

1 hit Apply

Access Time-Max (1)

7 ns 1

1 hit Apply

AUTO/SELF REFRESH 1

1 hit Apply

Clock Frequency-Max (fCLK) (1)

111 MHz 1

1 hit Apply

COMMON 1

1 hit Apply

1,2,4,8 1

1 hit Apply

R-PBGA-B90 1

1 hit Apply

13 mm 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

1 hit Apply

Memory Density (1)

134.2177 Mbit 1

1 hit Apply

SYNCHRONOUS DRAM 1

1 hit Apply

Memory Width (1)

32 1

1 hit Apply

1.0 1

1 hit Apply

1 1

1 hit Apply

90 1

1 hit Apply

4.1943 M 1

1 hit Apply

4000000.0 1

1 hit Apply

SYNCHRONOUS 1

1 hit Apply

70.0 °C 1

1 hit Apply

-25.0 °C 1

1 hit Apply

Organization (1)

4MX32 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

VFBGA 1

1 hit Apply

BGA90,9X15,32 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

GRID ARRAY, VERY THIN PROFILE, FINE PITCH 1

1 hit Apply

Refresh Cycles (1)

4096 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

1.8 V 1

1 hit Apply